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MW6S010GMR1

NXP

RF Power Field Effect Transistor


Description
Freescale Semiconductor Technical Data Replaced by MW6S010NR1/GNR1. There are no form, fit or function changes with this part replacement. N suffix indicates RoHS compliant part. RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitabl...



NXP

MW6S010GMR1

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