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PXAC241002FC

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Thermally-Enhanced High Power RF LDMOS FET


Description
PXAC241002FC Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 – 2400 MHz Description The PXAC241002FC is a 100-watt LDMOS FET with an asymmetric design, intended for use in multi-stantdard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features include dual-path design, input and output matching, high gain and a the...



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PXAC241002FC

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