LDMOS Transistors. MRFE6VS25NR1 Datasheet

MRFE6VS25NR1 Transistors. Datasheet pdf. Equivalent

MRFE6VS25NR1 Datasheet
Recommendation MRFE6VS25NR1 Datasheet
Part MRFE6VS25NR1
Description RF Power LDMOS Transistors
Feature MRFE6VS25NR1; NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement.
Manufacture NXP
Datasheet
Download MRFE6VS25NR1 Datasheet




NXP MRFE6VS25NR1
NXP Semiconductors
Technical Data
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
RF power transistors designed for both narrowband and broadband ISM,
broadcast and aerospace applications operating at frequencies from 1.8 to
2000 MHz. These devices are fabricated using NXP’s enhanced ruggedness
platform and are suitable for use in applications where high VSWRs are
encountered.
Typical Performance: VDD = 50 Volts
Frequency
(MHz)
Signal Type
Pout
(W)
1.8 to 30 (2,6)
Two--Tone
(10 kHz spacing)
25 PEP
30--512 (3,6)
Two--Tone
(200 kHz spacing)
25 PEP
512 (4)
Pulse (100 sec,
20% Duty Cycle)
25 Peak
512 (4)
CW
25
1030 (5)
CW
25
Gps
(dB)
25
17.1
25.4
25.5
22.5
D
(%)
51
30.1
74.5
74.7
60
IMD (1)
(dBc)
--30
--32
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal Type
VSWR
30 (2)
CW >65:1
at all Phase
Angles
512 (3)
CW
512 (4)
512 (4)
Pulse
(100 sec, 20%
Duty Cycle)
CW
1030 (5)
CW
Pin
(W)
0.23
(3 dB
Overdrive)
1.6
(3 dB
Overdrive)
0.14 Peak
(3 dB
Overdrive)
0.14
(3 dB
Overdrive
0.34
(3 dB
Overdrive
Test
Voltage
50
Result
No Device
Degradation
1. Distortion products are referenced to one of two tones. See p. 13, 20.
2. Measured in 1.8--30 MHz broadband reference circuit.
3. Measured in 30--512 MHz broadband reference circuit.
4. Measured in 512 MHz narrowband test circuit.
5. Measured in 1030 MHz narrowband test circuit.
6. The values shown are the minimum measured performance numbers across the in-
dicated frequency range.
Features
Wide operating frequency range
Extreme ruggedness
Unmatched, capable of very broadband operation
Integrated stability enhancements
Low thermal resistance
Extended ESD protection circuit
2012, 2019 NXP B.V.
RF Device Data
NXP Semiconductors
Document Number: MRFE6VS25N
Rev. 2, 03/2019
MRFE6VS25NR1
MRFE6VS25GNR1
1.8--2000 MHz, 25 W, 50 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
TO--270--2
PLASTIC
MRFE6VS25NR1
TO--270G--2
PLASTIC
MRFE6VS25GNR1
Gate 2
1 Drain
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
MRFE6VS25NR1 MRFE6VS25GNR1
1



NXP MRFE6VS25NR1
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
CW: Case Temperature 80C, 25 W CW, 50 Vdc, IDQ = 10 mA, 512 MHz
Thermal Impedance, Junction to Case
Pulse: Case Temperature 77C, 25 W Peak, 100 sec Pulse Width,
20% Duty Cycle, 50 Vdc, IDQ = 10 mA, 512 MHz
Table 3. ESD Protection Characteristics
Symbol
VDSS
VGS
Tstg
TC
TJ
Symbol
RJC
ZJC
Value
--0.5, +133
--6.0, +10
--65 to +150
--40 to +150
--40 to +225
Value (2,3)
1.2
0.29
Unit
Vdc
Vdc
C
C
C
Unit
C/W
C/W
Test Methodology
Class
Human Body Model (per JESD22--A114)
2, passes 2500 V
Machine Model (per EIA/JESD22--A115)
B, passes 250 V
Charge Device Model (per JESD22--C101)
IV, passes 2000 V
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3 260 C
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
— 400 nAdc
Drain--Source Breakdown Voltage
(VGS = 0 Vdc, ID = 50 mA)
V(BR)DSS
133
142
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS = 50 Vdc, VGS = 0 Vdc)
IDSS
2 Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS = 0 Vdc)
IDSS
7 Adc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 85 Adc)
VGS(th)
1.5
2.0
2.5 Vdc
Gate Quiescent Voltage
(VDD = 50 Vdc, ID = 10 mAdc, Measured in Functional Test)
VGS(Q)
2.0
2.4
3.0 Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 210 mAdc)
VDS(on)
0.28
Vdc
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 0.26 — pF
Output Capacitance
(VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss — 14.2 —
pF
Input Capacitance
(VDS = 50 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz)
Ciss — 39.2 — pF
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com/RF/calculators.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
(continued)
MRFE6VS25NR1 MRFE6VS25GNR1
2
RF Device Data
NXP Semiconductors



NXP MRFE6VS25NR1
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max Unit
Functional Tests (1) (In NXP Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 10 mA, Pout = 25 W Peak (5 W Avg.), f = 512 MHz,
100 sec Pulse Width, 20% Duty Cycle
Power Gain
Gps 24.0 25.4 27.0
Drain Efficiency
D 70.0 74.5 —
Input Return Loss
IRL — --16 --10
dB
%
dB
Load Mismatch/Ruggedness (In NXP Test Fixture, 50 ohm system) IDQ = 10 mA
Frequency
(MHz)
Signal
Type
VSWR
Pin
(W)
512 Pulse
>65:1
0.14 Peak
(100 sec, 20% Duty Cycle) at all Phase Angles (3 dB Overdrive)
Test Voltage, VDD
50
Result
No Device Degradation
CW 0.14
(3 dB Overdrive)
Table 6. Ordering Information
Device
Shipping Information
Package
MRFE6VS25NR1
MRFE6VS25GNR1
R1 Suffix = 500 Units, 24 mm Tape Width, 13--Inch Reel
TO--270--2
TO--270G--2
1. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing
(GN) parts.
RF Device Data
NXP Semiconductors
MRFE6VS25NR1 MRFE6VS25GNR1
3







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