N-channel MOSFET. PSMN4R3-100PS Datasheet

PSMN4R3-100PS MOSFET. Datasheet pdf. Equivalent

PSMN4R3-100PS Datasheet
Recommendation PSMN4R3-100PS Datasheet
Part PSMN4R3-100PS
Description N-channel MOSFET
Feature PSMN4R3-100PS; PSMN4R3-100PS N-channel 100 V 4.3 mΩ standard level MOSFET in TO-220 Rev. 1 — 27 October 2011 Pro.
Manufacture nexperia
Datasheet
Download PSMN4R3-100PS Datasheet





nexperia PSMN4R3-100PS
PSMN4R3-100PS
N-channel 100 V 4.3 mstandard level MOSFET in TO-220
Rev. 1 — 27 October 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
sources
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
Quick reference data
Parameter
drain-source voltage
drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
QG(tot)
total gate charge
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
[1] Continuous current limited by package
Conditions
Tj 25 °C; Tj 175 °C
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Tmb = 25 °C; see Figure 2
Min Typ Max Unit
- - 100 V
[1] - - 120 A
--
-55 -
338 W
175 °C
VGS = 10 V; ID = 25 A; Tj = 100 °C;
see Figure 12
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 13
-
[2] -
6.6 7.8 m
3.7 4.3 m
VGS = 10 V; ID = 75 A; VDS = 50 V; - 49 - nC
see Figure 14; see Figure 15
- 170 - nC
VGS = 10 V; Tj(init) = 25 °C;
ID = 120 A; Vsup 100 V;
RGS = 50 ; Unclamped
- - 537 mJ



nexperia PSMN4R3-100PS
Nexperia
PSMN4R3-100PS
N-channel 100 V 4.3 mstandard level MOSFET in TO-220
[2] Measured 3 mm from package.
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G gate
D drain
S source
D mounting base; connected to drain
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT78 (TO-220AB)
Table 3. Ordering information
Type number
Package
Name
PSMN4R3-100PS
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
PSMN4R3-100PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 27 October 2011
© Nexperia B.V. 2017. All rights reserved
2 of 15



nexperia PSMN4R3-100PS
Nexperia
PSMN4R3-100PS
N-channel 100 V 4.3 mstandard level MOSFET in TO-220
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
Conditions
Min
Tj 25 °C; Tj 175 °C
Tj 25 °C; Tj 175 °C; RGS = 20 k
-
-
-20
VGS = 10 V; Tj = 100 °C; see Figure 1
-
VGS = 10 V; Tmb = 25 °C; see Figure 1
[1] -
pulsed; tp 10 µs; Tmb = 25 °C; see Figure 3
-
Tmb = 25 °C; see Figure 2
-
-55
-55
-
IS source current
ISM peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; tp 10 µs; Tmb = 25 °C
[1] -
-
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;
Vsup 100 V; RGS = 50 ; Unclamped
-
[1] Continuous current limited by package
Max Unit
100 V
100 V
20 V
119 A
120 A
673 A
338 W
175 °C
175 °C
260 °C
120 A
673 A
537 mJ
200
ID
(A)
160
120
80
40
(1)
003aag825
120
Pder
(%)
80
40
03aa16
0
0 50 100 150 200
Tmb (°C)
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN4R3-100PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 27 October 2011
© Nexperia B.V. 2017. All rights reserved
3 of 15





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