N-channel MOSFET. PSMN4R3-100ES Datasheet

PSMN4R3-100ES MOSFET. Datasheet pdf. Equivalent

PSMN4R3-100ES Datasheet
Recommendation PSMN4R3-100ES Datasheet
Part PSMN4R3-100ES
Description N-channel MOSFET
Feature PSMN4R3-100ES; PSMN4R3-100ES N-channel 100 V 4.3 mΩ standard level MOSFET in I2PAK Rev. 1 — 31 October 2011 Prod.
Manufacture nexperia
Datasheet
Download PSMN4R3-100ES Datasheet




nexperia PSMN4R3-100ES
PSMN4R3-100ES
N-channel 100 V 4.3 mstandard level MOSFET in I2PAK
Rev. 1 — 31 October 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
sources
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
Conditions
Min Typ Max Unit
Tj 25 °C; Tj 175 °C
- - 100 V
Tmb = 25 °C; VGS = 10 V; see Figure 1 [1] - - 120 A
Tmb = 25 °C; see Figure 2
- - 338 W
-55 -
175 °C
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 100 °C;
see Figure 12; see Figure 13
- 6.6 7.8 m
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 13
[2] -
3.7 4.3 m
Dynamic characteristics
QGD gate-drain charge
QG(tot)
total gate charge
Avalanche ruggedness
VGS = 10 V; ID = 75 A; VDS = 50 V;
see Figure 14; see Figure 15
- 49 - nC
- 170 - nC
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;
Vsup 100 V; RGS = 50 ; Unclamped
- - 537 mJ
[1] Continuous current limited by package
[2] Measured 3 mm from package.



nexperia PSMN4R3-100ES
Nexperia
PSMN4R3-100ES
N-channel 100 V 4.3 mstandard level MOSFET in I2PAK
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G gate
D drain
S source
D mounting base; connected to drain
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT226 (I2PAK)
Table 3. Ordering information
Type number
Package
Name
PSMN4R3-100ES
I2PAK
4. Limiting values
Description
plastic single-ended package (I2PAK); TO-262
Version
SOT226
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
IDM
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
Conditions
Tj 25 °C; Tj 175 °C
Tj 25 °C; Tj 175 °C; RGS = 20 k
VGS = 10 V; Tj = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1
pulsed; tp 10 µs; Tmb = 25 °C;
see Figure 3
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
Tmb = 25 °C; see Figure 2
IS source current
ISM peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; tp 10 µs; Tmb = 25 °C
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;
Vsup 100 V; RGS = 50 ; Unclamped
[1] Continuous current limited by package
PSMN4R3-100ES
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 31 October 2011
Min
-
-
-20
-
[1] -
-
Max Unit
100 V
100 V
20 V
119 A
120 A
673 A
- 338 W
-55 175 °C
-55 175 °C
- 260 °C
[1] -
-
120 A
673 A
- 537 mJ
© Nexperia B.V. 2017. All rights reserved
2 of 14



nexperia PSMN4R3-100ES
Nexperia
PSMN4R3-100ES
N-channel 100 V 4.3 mstandard level MOSFET in I2PAK
200
ID
(A)
160
120
80
40
0
0
003aag825
(1)
50 100 150 200
Tmb (°C)
120
Pder
(%)
80
03aa16
40
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
103
ID
(A)
102
Limit RDSon = VDS / ID
10
1
10-1
10-1
1
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aag822
tp =10 μ s
100 μs
DC
10
1 ms
10 ms
100 ms
102
VDS (V)
103
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN4R3-100ES
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 31 October 2011
© Nexperia B.V. 2017. All rights reserved
3 of 14







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