N-channel MOSFET. PSMN7R0-60YS Datasheet

PSMN7R0-60YS MOSFET. Datasheet pdf. Equivalent

PSMN7R0-60YS Datasheet
Recommendation PSMN7R0-60YS Datasheet
Part PSMN7R0-60YS
Description N-channel MOSFET
Feature PSMN7R0-60YS; PSMN7R0-60YS N-channel LFPAK 60 V 6.4 mΩ standard level MOSFET Rev. 02 — 30 March 2010 Product da.
Manufacture nexperia
Datasheet
Download PSMN7R0-60YS Datasheet




nexperia PSMN7R0-60YS
PSMN7R0-60YS
N-channel LFPAK 60 V 6.4 mstandard level MOSFET
Rev. 02 — 30 March 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
„ Advanced TrenchMOS provides low
RDSon and low gate charge
„ High efficiency gains in switching
power converters
„ Improved mechanical and thermal
characteristics
„ LFPAK provides maximum power
density in a Power SO8 package
1.3 Applications
„ DC-to-DC converters
„ Lithium-ion battery protection
„ Load switching
„ Motor control
„ Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage Tj 25 °C; Tj 175 °C
ID drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
Tj junction temperature
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
VGS = 10 V; Tj(init) = 25 °C;
ID = 89.1 A; Vsup 60 V;
RGS = 50 ; unclamped
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 10 V; ID = 60 A;
VDS = 30 V; see Figure 14
and 15
Min Typ Max Unit
- - 60 V
- - 89 A
- - 117 W
-55 -
175 °C
- - 143 mJ
- 9.6 - nC
- 45 - nC



nexperia PSMN7R0-60YS
Nexperia
PSMN7R0-60YS
N-channel LFPAK 60 V 6.4 mstandard level MOSFET
Table 1. Quick reference …continued
Symbol Parameter
Conditions
Static characteristics
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 15 A;
Tj = 100 °C; see Figure 12
VGS = 10 V; ID = 15 A;
Tj = 25 °C; see Figure 13
Min Typ Max Unit
- - 10.2 m
- 4.95 6.4 m
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1S
source
2S
source
3S
source
4G
gate
mb D
mounting base; connected to
drain
3. Ordering information
Simplified outline
mb
1234
SOT669 (LFPAK)
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
Description
PSMN7R0-60YS LFPAK
plastic single-ended surface-mounted package (LFPAK); 4 leads
Version
SOT669
PSMN7R0-60YS_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 30 March 2010
© Nexperia B.V. 2017. All rights reserved
2 of 15



nexperia PSMN7R0-60YS
Nexperia
PSMN7R0-60YS
N-channel LFPAK 60 V 6.4 mstandard level MOSFET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
IDM
Ptot
Tstg
Tj
Tsld(M)
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering
temperature
Conditions
Tj 25 °C; Tj 175 °C
Tj 25 °C; Tj 175 °C; RGS = 20 k
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1
tp 10 µs; pulsed; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
Source-drain diode
IS source current Tmb = 25 °C
ISM peak source current tp 10 µs; pulsed; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S
non-repetitive
VGS = 10 V; Tj(init) = 25 °C; ID = 89.1 A; Vsup 60 V;
drain-source avalanche RGS = 50 ; unclamped
energy
Min Max Unit
- 60 V
- 60 V
-20 20
V
- 63 A
- 89 A
- 356 A
- 117 W
-55 175 °C
-55 175 °C
- 260 °C
- 89 A
- 356 A
- 143 mJ
100
ID
(A)
80
60
40
20
0
0
003aae053
50 100 150 200
Tmb (°C)
120
Pder
(%)
80
03aa16
40
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN7R0-60YS_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 30 March 2010
© Nexperia B.V. 2017. All rights reserved
3 of 15





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