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SILICON TRANSISTOR. C2655 Datasheet

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SILICON TRANSISTOR. C2655 Datasheet






C2655 TRANSISTOR. Datasheet pdf. Equivalent




C2655 TRANSISTOR. Datasheet pdf. Equivalent





Part

C2655

Description

NPN SILICON TRANSISTOR



Feature


UNISONIC TECHNOLOGIES CO., LTD 2SC2655 NPN SILICON TRANSISTOR POWER AMPLIFIE R APPLICATIONS POWER SWITCHING APPLICAT IONS  FEATURES * Low saturation vol tage: VCE(SAT)= 0.5V (Max.) * High spee d switching time: TSTG=1.0μs (Typ.) ORDERING INFORMATION Ordering Numbe r Lead Free Halogen Free 2SC2655G-x- AB3-R 2SC2655G-x-AB3-R 2SC2655G-x-AE3 -R 2SC2655G-x-AE3-R 2.
Manufacture

UTC

Datasheet
Download C2655 Datasheet


UTC C2655

C2655; SC2655L-x-T9N-B 2SC2655G-x-T9N-B 2SC26 55L-x-T9N-K 2SC2655G-x-T9N-K Note: Pi n Assignment: B: Base C: Collector E: E mitter Package SOT-89 SOT-23 TO-92NL T O-92NL Pin Assignment 123 BCE BEC ECB ECB Packing Tape Reel Tape Reel Tape B ox Bulk  MARKING SOT-23 SOT-89 TO -92NL L: Lead Free G: Halogen Free Dat e Code UTC 2SC2655 www.unisonic.com.t w Copyright © 2016 U.


UTC C2655

nisonic Technologies Co., Ltd 1 of 4 QW -R211-013.I 2SC2655 NPN SILICON TRANS ISTOR  ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) P ARAMETER SYMBOL RATING UNIT Collect or-Base Voltage VCBO 50 V Collector -Emitter Voltage .


UTC C2655

.

Part

C2655

Description

NPN SILICON TRANSISTOR



Feature


UNISONIC TECHNOLOGIES CO., LTD 2SC2655 NPN SILICON TRANSISTOR POWER AMPLIFIE R APPLICATIONS POWER SWITCHING APPLICAT IONS  FEATURES * Low saturation vol tage: VCE(SAT)= 0.5V (Max.) * High spee d switching time: TSTG=1.0μs (Typ.) ORDERING INFORMATION Ordering Numbe r Lead Free Halogen Free 2SC2655G-x- AB3-R 2SC2655G-x-AB3-R 2SC2655G-x-AE3 -R 2SC2655G-x-AE3-R 2.
Manufacture

UTC

Datasheet
Download C2655 Datasheet




 C2655
UNISONIC TECHNOLOGIES CO., LTD
2SC2655
NPN SILICON TRANSISTOR
POWER AMPLIFIER
APPLICATIONS POWER
SWITCHING APPLICATIONS
FEATURES
* Low saturation voltage: VCE(SAT)= 0.5V (Max.)
* High speed switching time: TSTG=1.0μs (Typ.)
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2SC2655G-x-AB3-R
2SC2655G-x-AB3-R
2SC2655G-x-AE3-R
2SC2655G-x-AE3-R
2SC2655L-x-T9N-B
2SC2655G-x-T9N-B
2SC2655L-x-T9N-K
2SC2655G-x-T9N-K
Note: Pin Assignment: B: Base C: Collector E: Emitter
Package
SOT-89
SOT-23
TO-92NL
TO-92NL
Pin Assignment
123
BCE
BEC
ECB
ECB
Packing
Tape Reel
Tape Reel
Tape Box
Bulk
MARKING
SOT-23
SOT-89
TO-92NL
L: Lead Free
G: Halogen Free
Date Code
UTC
2SC2655
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
1 of 4
QW-R211-013.I




 C2655
2SC2655
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
50
5
V
V
Collector Current
IC 2 A
Collector Current (Pulse) (Note 2)
ICP
3
A
Base Current
SOT-23
IB
0.5 A
350
Collector Power Dissipation
SOT-89
PC
500 mW
TO-92NL
900
Junction Temperature
TJ
+150
C
Storage Temperature
TSTG
-55 ~ +150
C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. PW16ms, Duty Cycle50%.
ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified)
PARAMETER
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
SYMBOL
TEST CONDITIONS
BVCBO IC= 10μA, IE= 0
BVCEO IC= 10mA, IB= 0
BVEBO
ICBO
IEBO
hFE1
hFE2
VCE(SAT)
VBE(SAT)
fT
COB
IE= 10μA, IC= 0
VCB=50V, IE= 0
VEB= 5V, IC=0
VCE=2V, IC=0.5A
VCE=2V, IC=1.5A
IC=1A, IB=0.05A
IC=1A, IB=0.05A
VCE=2V, IC=0.5A
VCB= 10V, IE= 0, f=1MHz
MIN TYP MAX UNIT
50 V
50 V
5V
1.0 μA
1.0 μA
70 240
40
0.5 V
1.2 V
100 MHz
30 pF
Switching Time(Turn-on Time)
tON
CLASSIFICATION OF hFE1
RANK
RANGE
O
70-140
Y
120-240
IB1= -IB2=0.05A
DUTY CYCLE1%
0.1 μS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R211-013.I




 C2655
2SC2655
TYPICAL CHARACTERISTICS
2.4
2.0
25
20
18
1.6
1.2
0.8
0.4
Ic-VCE
Common Emitter
15 TA=25°С
12
10
8
6
4
IB=2mA
0
02
46
8 10 12 14
Collector -Emitter Voltage, VcE(V)
VCE-Ic
1
0.8
0.6 IB=5mA
10
20
0.4 30
40
0.2
Common Emitter
0 TA=100°С
0 0.4 0.8 1.2 1.6 2.0 2.4
Collector Current, Ic (A)
1000
500
300
100
50
30
hFE -Ic
TA=25°С
Common Emitter
VCE=2V
TA=100°С
TA=-55°С
10
0.01 0.03
0.1 0.3
1
Collector Current, Ic (A)
NPN SILICON TRANSISTOR
1
0.8
0.6 IB=5mA
0.4
0.2
VCE-Ic
Common
10 20 Emitter
TA=25°С
30
40
0
0 0.4 0.8 1.2 1.6 2.0 2.4
Collector Current, Ic (A)
1
IB=5mA
0.8
VCE-Ic
Common EmitterTA= -55°С
0.6 10 20 30
0.4 40
0.2 50
0
0 0.4 0.8 1.2 1.6 2.0 2.4
Collector Current, Ic (A)
VCE(SAT) -Ic
1
Common Emitter
0.5 Ic/IB=20
0.3
0.1
0.05
0.02
0.01
TA=100°С
TA=25°С
TA=-55°С
0.03 0.05 0.1 0.3 0.5 1
Collector Current, Ic (A)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R211-013.I



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