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MBR300150CT

GeneSiC

Silicon Power Schottky Diode


Description
Silicon Power Schottky Diode Features High Surge Capability Types from 150 V to 200 V VRRM Not ESD Sensitive MBR300150CT thru MBR300200CTR VRRM = 150 V - 200 V IF(AV) = 300 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR300150CT(R) MBR300200CT(R) R...



GeneSiC

MBR300150CT

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