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RA30H4452M1A

Mitsubishi
Part Number RA30H4452M1A
Manufacturer Mitsubishi
Description Silicon RF Power Modules
Published Jun 27, 2019
Detailed Description < Silicon RF Power Modules > RA30H4452M1A RoHS Compliance, 440-520MHz 30W 12.5V, 2 Stage Amp. For Digital Mobile Radio ...
Datasheet PDF File RA30H4452M1A PDF File

RA30H4452M1A
RA30H4452M1A

Overview
< Silicon RF Power Modules > RA30H4452M1A RoHS Compliance, 440-520MHz 30W 12.
5V, 2 Stage Amp.
For Digital Mobile Radio DESCRIPTION The RA30H4452M1A is a 30-watt RF MOSFET Amplifier Module for 12.
5-volt digital mobile radios of TDMA that operate in the 440- to 520-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors.
The output power and drain current increase as the gate voltage increases.
At V GG1=3.
4V, VGG2=5V, the typical gate currents are 1mA.
This module is designed for TDMA, therefore this module separated the gate terminal of each MOSFET to make Ton/Toff time rapid.
BLOCK DIAGRAM 2 1 3 4 5 FEATURES • Enhancement-Mode MOSFET (IDD...


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