GTVA126001EC/FC
Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC – 1.4 GHz
Description
The GTVA126001EC and GTVA126001FC are 600-watt GaN on SiC high electron mobility transistors (HEMT) for use in the DC - 1.4 GHz frequecy band. They feature input matching, high efficiency, and thermallyenhanced packages.
GTVA126001EC Package H-36248-2
GTVA126001...
