14N25 Datasheet (data sheet) PDF





14N25 Datasheet, N-Channel Power MOSFET

14N25   14N25  

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RFD14N05, RFD14N05SM, RFP14N05 Data She et January 2002 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs These are N-cha nnel power MOSFETs manufactured using t he MegaFET process. This process, which uses feature sizes approaching those o f LSI integrated circuits, gives optimu m utilization of silicon, resulting in outstanding performance. They were desi gned for use in applications such as sw itching regulators, switching converter s, motor drivers and relay drivers. The se transistors can be operated directly from integrated circuits. Formerly dev elopmental type TA09770. Ordering Info rmation PART NUMBER PACKAGE BRAND R FD14N05 TO-251AA F14N05

14N25 Datasheet, N-Channel Power MOSFET

14N25   14N25  
RFD14N05SM TO-252AA F14N05 RFP14N05 TO-220AB RFP14N05 NOTE: When orderi ng, use the entire part number. Add the suffix 9A to obtain the TO-252AA vari ant in the tape and reel, i.e., RFD14N0 5SM9A. Features • 14A, 50V • rDS( ON) = 0.100Ω • Temperature Compensa ting PSPICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Re lated Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packag ing JEDEC TO-251AA DRAIN (FLANGE) SO URCE DRAIN GATE JEDEC TO-252AA GATE S OURCE DRAIN (FLANGE) JEDEC TO-220AB D RAIN (FLANGE) SOURCE DRAIN GATE ©200 2 Fairchild Semiconductor Corporation RFD14N05, RFD14N05SM, RFP14N05 Rev. B RFD14N05, RFD14N05SM, RFP14N05 Absolut e Maximum Ratings TC = 25oC, Unless Oth erwise Specified Drain to Source Volta ge (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Vo ltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Vol tage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Continuo us Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I








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