PSMN1R4-30YLD Datasheet (data sheet) PDF





PSMN1R4-30YLD Datasheet, N-channel MOSFET

PSMN1R4-30YLD   PSMN1R4-30YLD  

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PSMN1R4-30YLD N-channel 30 V, 1.4 mΩ l ogic level MOSFET in LFPAK56 using Nex tPowerS3 Technology 30 May 2014 Produ ct data sheet 1. General description L ogic level gate drive N-channel enhance ment mode MOSFET in LFPAK56 package. Ne xtPowerS3 portfolio utilising Nexperia s unique “SchottkyPlus” technolog y delivers high efficiency, low spiking performance usually associated with MO SFETs with an integrated Schottky or Sc hottky-like diode but without problemat ic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequen cies. 2. Features and benefits • Ult ra low QG, QGD and QOSS for high s

PSMN1R4-30YLD Datasheet, N-channel MOSFET

PSMN1R4-30YLD   PSMN1R4-30YLD  
ystem efficiency, especially at higher s witching frequencies • Superfast swit ching with soft-recovery; s-factor > 1 • Low spiking and ringing for low EMI designs • Unique “SchottkyPlus” technology; Schottky-like performance w ith < 1 µA leakage at 25 °C • Optim ised for 4.5 V gate drive • Low paras itic inductance and resistance • High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C • Wa ve solderable; exposed leads for optima l visual solder inspection 3. Applicat ions • On-board DC-to-DC solutions fo r server and telecommunications • Sec ondary-side synchronous rectification i n telecommunication applications • Vo ltage regulator modules (VRM) • Point -of-Load (POL) modules • Power delive ry for V-core, ASIC, DDR, GPU, VGA and system components • Brushed and brush less motor control • Power OR-ing 4. Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Param eter Conditions drain-source voltage 25 °C ≤ Tj ≤ 175 °C drain curren t Tmb = 25 °C; VGS = 10 V; Fig. 2 to tal power dissipation Tmb = 25 °C; Fig . 1 Min Typ Max Unit - - 30 V [1] - - 100 A - - 166 W Nexperia PSMN1R4-30YL D N-channel 30 V, 1.4 mΩ logic level M OSFET in LFPAK56 using NextPowerS3 Technology Symbol Parameter Tj junction temperature Stat








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