PBSS5230QA Datasheet (data sheet) PDF





PBSS5230QA Datasheet, 2A PNP low VCEsat (BISS) transistor

PBSS5230QA   PBSS5230QA  

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PBSS5230QA 30 V, 2 A PNP low VCEsat (BIS S) transistor 23 August 2013 Product d ata sheet 1. General description PNP l ow VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra s mall DFN1010D-3 (SOT1215) Surface-Mount ed Device (SMD) plastic package with vi sible and solderable side pads. NPN com plement: PBSS4230QA. 2. Features and b enefits • Very low collector

PBSS5230QA Datasheet, 2A PNP low VCEsat (BISS) transistor

PBSS5230QA   PBSS5230QA  
-emitter saturation voltage VCEsat • H igh collector current capability IC and ICM • High collector current gain hF E at high IC • High energy efficiency due to less heat generation • Reduce d Printed-Circuit Board (PCB) area requ irements • Solderable side pads • A EC-Q101 qualified 3. Applications • Loadswitch • Battery-driven devices Power management • Charging circuits • Powe








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