TK560P65Y Datasheet (data sheet) PDF





TK560P65Y Datasheet, Silicon N-Channel MOSFET

TK560P65Y   TK560P65Y  

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MOSFETs Silicon N-Channel MOS (DTMOS) TK560P65Y TK560P65Y 1. Applications • Switching Voltage Regulators 2. Fea tures (1) Low drain-source on-resistanc e: RDS(ON) = 0.43 Ω (typ.) by using S uper Junction Structure : DTMOS (2) Eas y to control Gate switching (3) Enhance ment mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.24 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source D PAK 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specifie d) Characteristics Symbol Rating Un it Drain-source voltage VDSS 650 V G ate-source voltage VGSS ±30 Drain c urrent (DC) (Tc = 25 ) (Note 1) I D 7A Drain current (DC) (Tc = 100

TK560P65Y Datasheet, Silicon N-Channel MOSFET

TK560P65Y   TK560P65Y  
) (Note 1) ID 4.4 A Drain curren t (pulsed) (Tc = 25 ) (Note 1) ID P 28 A Power dissipation (Tc = 25 ) PD 60 W Single-pulse avalanche ene rgy (Note 2) EAS 59 mJ Single-pulse avalanche current IAS 1.8 A Reverse drain current (DC) (Note 1) IDR 7 R everse drain current (pulsed) (Note 1) IDRP 28 A Channel temperature Tch 150  Storage temperature Tstg -55 to 150  Note: Using continuously under heavy loads (e.g. the applicatio n of high temperature/current/voltage a nd the significant change in temperatur e, etc.) may cause this product to decr ease in the reliability significantly e ven if the operating conditions (i.e. o perating temperature/current/voltage, e tc.) are within the absolute maximum ra tings. Please design the appropriate re liability upon reviewing the Toshiba Se miconductor Reliability Handbook ("Hand ling Precautions"/"Derating Concept and Methods") and individual reliability d ata (i.e. reliability test report and e stimated failure rate, etc). ©2016 To shiba Corporation 1 Start of commerci al production 2016-12 2016-12-14 Rev.3. 0 5. Thermal Characteristics Character istics Channel-to-case thermal resistan ce Channel-to-ambient thermal resistanc e Note 1: Ensure that the channel tempe rature does not exceed 150 . Note 2: VDD = 90 V, Tch = 25  (








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