PMDXB550UNE
30 V, dual N-channel Trench MOSFET
25 March 2015
Product data sheet
1. General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
Low threshold voltage Leadless ultra sm...
