V20PW12 Datasheet: Trench MOS Barrier Schottky Rectifier





V20PW12 Trench MOS Barrier Schottky Rectifier Datasheet

Part Number V20PW12
Description Trench MOS Barrier Schottky Rectifier
Manufacture Vishay
Total Page 5 Pages
PDF Download Download V20PW12 Datasheet PDF

Features: www.vishay.com V20PW12 Vishay General S emiconductor High Current Density Surf ace-Mount TMBS® (Trench MOS Barrier Sc hottky) Rectifier Ultra Low VF = 0.49 V at IF = 5 A eSMP® Series 1 2 SlimD PAK (TO-252AE) PIN 1 PIN 2 K HEATSINK K FEATURES • Very low profile - ty pical height of 1.3 mm • Trench MOS S chottky technology • Ideal for automa ted placement • Low forward voltage d rop, low power losses • High efficien cy operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - A utomotive ordering code: base P/NHM3 Material categorization: for definiti ons of compliance please see www.vishay .com/doc?99912 DESIGN SUPPORT TOOLS cl ick logo to get started Models Availab le PRIMARY CHARACTERISTICS IF(AV) 20 A VRRM 120 V IFSM 200 A VF at IF = 20 A (TA = 125 °C) 0.72 V TJ max. 150 °C Package SlimDPAK (TO-252AE) Circuit configuration Single TYPICAL APPLICATIONS For use in low voltage high frequency DC/DC converters, freewheeling dio.

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www.vishay.com
V20PW12
Vishay General Semiconductor
High Current Density Surface-Mount
TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.49 V at IF = 5 A
eSMP® Series
1
2
SlimDPAK (TO-252AE)
PIN 1
PIN 2
K
HEATSINK
K
FEATURES
• Very low profile - typical height of 1.3 mm
• Trench MOS Schottky technology
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV)
20 A
VRRM
120 V
IFSM
200 A
VF at IF = 20 A (TA = 125 °C)
0.72 V
TJ max.
150 °C
Package
SlimDPAK (TO-252AE)
Circuit configuration
Single
TYPICAL APPLICATIONS
For use in low voltage high frequency DC/DC converters,
freewheeling diodes, and polarity protection applications.
MECHANICAL DATA
Case: SlimDPAK (TO-252AE)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20PW12
Device marking code
V20PW12
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VRRM
IF(AV) (1)
IFSM
120
20
200
Operating junction temperature range
Storage temperature range
TJ (2)
TSTG
-40 to +150
-55 to +150
Notes
(1) With infinite heatsink
(2) The heat generated must be less than the thermal conductivity from junction to ambient: dPD/dTJ < 1/RJA
UNIT
V
A
A
°C
°C
Revision: 08-Feb-2019
1 Document Number: 87682
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

              






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