n-channel JFET. U311 Datasheet

U311 JFET. Datasheet pdf. Equivalent

U311 Datasheet
Recommendation U311 Datasheet
Part U311
Description n-channel JFET
Feature U311; n-channel JFET designed for • • • • VHF Amplifiers • Oscillators • Mixers ABSOLUTE MAXIMUM RATINGS .
Manufacture Siliconix
Datasheet
Download U311 Datasheet




Siliconix U311
n-channel JFET
designed for • •
VHF Amplifiers
Oscillators
Mixers
ABSOLUTE MAXIMUM RATINGS (25°C)
Gate-Drain or Gate-Source Voltage ............... -25 V
Gate Current ............................... 10mA
Total Device Dissipation (Derate 1.7 mWrC) ..... 300 mW
Storage Temperature Range .............. -65 to +200°C
Lead Temperature
(1/16" from case for 10 seconds)
.............
300°C
H
Siliconix
-----
Performance Curves NZB
See Section 4
BENEFITS
• High Power Gain
16 dB Typ @ 105 MHz, Common-
Gate
11 dB Typ @450 MHz, Common-
Gate
• Low Noise Figure
1.5 dB Typ@ 105 MHz
2.7 dB Typ @450 MHz
• Wide Dynamic Range-Greater than
100 dB
TO-72
See Section 6
o~: ~~
ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted)
Characteristic
1
1-
2
1- S
3T
1- A
4T
I-I
5C
i-
6
IGSS Gate Reverse Current
BVGSS Gate-Source Breakdown Voltage
VGS(off) Gate-Source Cutoff Voltage
lOSS
Saturation Drain Current (Note 1)
VGS(f) Gate·Source Forward Voltage
-7
B0
-Y
9N
'-
10
9fg
gog
Cgd
Cgs
Common-Gate Forward Transconductance (Note 1)
Common-Gate Output Conductance
Gate·Dral" Capacitance
Gate·Source Capacitance
Min
-25
-1
20
10.000
Max Typ Unit
Test Condition.
-150
-150
pA
VGS=-15V.VOS=0
nA
150·C
IG = -lpA, VOS = 0
V
-6 VOS= 10V,IO= 1 nA
no "If!. VDS=1QV,'lGS=O
1 V IG = 1 rnA, VOS = 0
17,000
pmho VOS = 10 V, 10 = 10 mA
250
if = 1 kHz
2.5
pF VOG= 10V,IO= 5mA
if= 1 MHz
5.0
NOTE:
1. Pulse test duration = 2 ms.
NZB
3-122
Siliconix





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