2N6987 Transistor Datasheet

2N6987 Datasheet PDF, Equivalent


Part Number

2N6987

Description

Multiple (Quad) PNP Silicon Dual In-Line And Flatpack Switching Transistor

Manufacture

VPT

Total Page 10 Pages
PDF Download
Download 2N6987 Datasheet PDF


2N6987
2N6987, 2N6987U, 2N6988
Multiple (Quad) PNP Silicon Dual In-Line
And Flatpack Switching Transistor
Features
Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/558
TO-116, 20 PIN Leadless (U) and 14 PIN Flat Pack package types
Radiation Tolerant Levels M, D, P, L, and R
Rev. V2
Electrical Characteristics
Parameter
Off Characteristics
Collector - Emitter Breakdown Voltage
Collector - Base Cutoff Current
Emitter - Base Cutoff Current
On Characteristics1
Forward Current Transfer Ratio
Test Conditions
IC = 10 mA dc
VCB = 60 V dc
VCB = 50 V dc
VBE = 5.0 V dc
VEB = 4.0 V dc
VCE = 10 V dc; IC = 0.1 mA dc
VCE = 10 V dc; IC = 1.0 mA dc
VCE = 10 V dc; IC = 10 mA dc
VCE = 10 V dc; IC = 150 mA dc
VCE = 10 V dc; IC = 500 mA dc
Symbol Units Min. Max.
V(BR)CEO V dc
60
ICBO1 µA dc
ICBO2 nA dc
IEBO1 µA dc
IEBO2 nA dc
10
10
10
50
75
100 450
hFE - 100
100 300
50
Collector - Emitter Saturation Voltage
Base - Emitter Saturation Voltage
Dynamic Characteristics
Magnitude of Common
Small-Signal Short-Circuit
Forward Current Transfer Ratio
Small-Signal Short Circuit
Forward Current Transfer Ratio
IC = 150 mA dc; IB = 15 mA dc
IC = 500 mA dc, IB = 50 mA dc
IC = 150 mA dc; IB = 15 mA dc
IC = 500 mA dc; IB = 50 mA dc
VCE(SAT)1 V dc
VCE(SAT)2
VBE(SAT)1
VBE(SAT)2
V dc
VCE = 20 V dc; IC = 50 mA dc; f = 100 MHz | hFE | -
2.0
VCE = 10 V dc; IC = 1.0 mA dc; f = 1 kHz
hfe -
100
Open Circuit Output Capacitance
Input Capacitance
(Output Open-Circuited)
VCB = 10 V dc; IE = 0; 100 kHz ≤ f ≤ 1 MHz
VEB = 2.0 V dc; IC = 0; 100 kHz ≤ f ≤ 1 MHz
Cobo
pF
Cibo pF
1
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
0.4
1.6
1.3
2.6
8
8.0
30

2N6987
2N6987, 2N6987U, 2N6988
Multiple (Quad) PNP Silicon Dual In-Line
And Flatpack Switching Transistor
Rev. V2
Electrical Characteristics (TA = +25oC unless otherwise specified)
Parameter
Test Conditions
Symbol Units Min.
Max.
Collector - Base Cutoff Current
TA = +150oC
VCB = 50 V dc
ICBO3 µA dc —
10
Forward-Current Transfer Ratio
TA = -55oC
VCE = 10 V dc; IC = 1.0 mA dc
hFE6
50
Transistor to Transistor Resistance
Switching Characteristics
Turn-On Time (saturated)
Turn-Off Time (saturated)
| VT-T | = 500 V dc
RT-T ohms 1010
See figure 13 of MIL-PRF-19500/559
See figure 14 of MIL-PRF-19500/559
ton ns
toff ns
45
300
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com


Features 2N6987, 2N6987U, 2N6988 Multiple (Quad) PNP Silicon Dual In-Line And Flatpack S witching Transistor Features • Availa ble in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/558 • TO-116, 20 PIN Le adless (U) and 14 PIN Flat Pack package types • Radiation Tolerant Levels M, D, P, L, and R Rev. V2 Electrical Ch aracteristics Parameter Off Characteris tics Collector - Emitter Breakdown Volt age Collector - Base Cutoff Current Emi tter - Base Cutoff Current On Character istics1 Forward Current Transfer Ratio Test Conditions IC = 10 mA dc VCB = 60 V dc VCB = 50 V dc VBE = 5.0 V dc VEB = 4.0 V dc VCE = 10 V dc; IC = 0.1 mA d c VCE = 10 V dc; IC = 1.0 mA dc VCE = 1 0 V dc; IC = 10 mA dc VCE = 10 V dc; IC = 150 mA dc VCE = 10 V dc; IC = 500 mA dc Symbol Units Min. Max. V(BR)CEO V dc 60 ICBO1 µA dc ICBO2 nA dc — IEBO1 µA dc IEBO2 nA dc — — 10 10 10 50 75 100 450 hFE - 100 100 300 50 Collector - Emitter Saturation Volt age Base - Emitter Saturation Voltage Dynamic Characteristics Magnitude of Co.
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