2N3419 Transistor Datasheet

2N3419 Datasheet PDF, Equivalent


Part Number

2N3419

Description

NPN Medium Power Silicon Transistor

Manufacture

VPT

Total Page 5 Pages
Datasheet
Download 2N3419 Datasheet


2N3419
2N3418(S) - 2N3421(S) Series
NPN Medium Power Silicon Transistor
Features
Available in JAN, JANTX, JANTXV, JANS and
JANSR 100K rads(Si) per MIL-PRF-19500/393
TO-5 & TO-39 (TO-205AD) Packages
Ideal for Medium Power Applications Requiring
High Frequency Switching
Rev. V4
Electrical Characteristics (TA = +25oC unless otherwise noted)
Parameter
Off Characteristics
Collector - Emitter Breakdown Voltage
Collector - Emitter Cutoff Current
Collector - Emitter Cutoff Current
Test Conditions
Symbol Units Min.
IC = 50 mA dc
2N3418, S, 2N3420, S
2N3419, S, 2N3421, S
VCE = 80 Vdc, VBE = -0.5 Vdc
2N3418, S, 2N3420, S
VCE = 120 Vdc, VBE = -0.5 Vdc
2N3419, S, 2N3421, S
VCE = 45
2N3418, S, 2N3420, S
VCE = 60
2N3419, S, 2N3421, S
V(BR)CEO V dc
60
80
ICEX1 µA dc
ICEO µA dc
Emitter - Base Cutoff Current
On Characteristics1
Forward Current Transfer Ratio
Base - Emitter Voltage
Collector - Emitter Saturation Voltage
VEB = 6 Vdc, IC = 0
VEB = 8 Vdc, IC = 0
IEBO µA dc
IC = 100 mA dc, VCE = 2 V dc
2N3418, S, 2N3419, S
2N3420, S, 2N3421, S
IC = 1 A dc, VCE = 2 V dc
2N3418, S, 2N3419, S
2N3420, S, 2N3421, S
IC = 2 A dc, VCE = 2 V dc
2N3418, S, 2N3419, S
2N3420, S, 2N3421, S
IC = 5 A dc, VCE = 5 V dc
2N3418, S, 2N3419, S
2N3420, S, 2N3421, S
IC = 1 A dc, IB = 0.1 A dc
IC = 2 A dc, IB = 0.2 A dc
IC = 1 A dc, IB = 0.1 A dc
IC = 2 A dc, IB = 0.2 A dc
HFE -
VBE(SAT) Vdc
20
40
20
40
15
30
10
15
0.6
0.7
VCE(SAT) Vdc
Max.
0.3
0.3
5.0
5.0
0.5
10.0
60
120
1.2
1.4
0.25
0.50
1
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com

2N3419
2N3418(S) - 2N3421(S) Series
NPN Medium Power Silicon Transistor
Rev. V4
Parameter
Collector - Emitter Cutoff Current
Forward Current Transfer Ratio
Test Conditions
TA = +150oC
VCE = 80 Vdc, VBE = -0.5 Vdc
2N3418, S, 2N3420, S
VCE = 120 Vdc, VBE = -0.5 Vdc
2N3419, S, 2N3421, S
TA = -55oC
Symbol Units Min.
ICEX2 µA dc
hfe5 10
Max.
16
16
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com


Features 2N3418(S) - 2N3421(S) Series NPN Medium Power Silicon Transistor Features • A vailable in JAN, JANTX, JANTXV, JANS an d JANSR 100K rads(Si) per MIL-PRF-19500 /393 • TO-5 & TO-39 (TO-205AD) Packag es • Ideal for Medium Power Applicati ons Requiring High Frequency Switching Rev. V4 Electrical Characteristics (T A = +25oC unless otherwise noted) Para meter Off Characteristics Collector - E mitter Breakdown Voltage Collector - Em itter Cutoff Current Collector - Emitte r Cutoff Current Test Conditions Symb ol Units Min. IC = 50 mA dc 2N3418, S, 2N3420, S 2N3419, S, 2N3421, S VCE = 8 0 Vdc, VBE = -0.5 Vdc 2N3418, S, 2N3420 , S VCE = 120 Vdc, VBE = -0.5 Vdc 2N341 9, S, 2N3421, S VCE = 45 2N3418, S, 2N3 420, S VCE = 60 2N3419, S, 2N3421, S V (BR)CEO V dc 60 80 ICEX1 µA dc — ICEO µA dc — Emitter - Base Cutof f Current On Characteristics1 Forward C urrent Transfer Ratio Base - Emitter Vo ltage Collector - Emitter Saturation Vo ltage VEB = 6 Vdc, IC = 0 VEB = 8 Vdc, IC = 0 IEBO µA dc — IC = 100 mA .
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