Silicon Transistor. 2N2484 Datasheet

2N2484 Transistor. Datasheet pdf. Equivalent

Part 2N2484
Description NPN Low Power Silicon Transistor
Feature 2N2484, 2N2484UA, 2N2484UB NPN Low Power Silicon Transistor Features • Available in JAN, JANTX, JANT.
Manufacture VPT
Datasheet
Download 2N2484 Datasheet



2N2484
2N2484, 2N2484UA, 2N2484UB
NPN Low Power Silicon Transistor
Features
Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/376
Lightweight & Low Power
Military & Other High Reliability Applications
TO-18 (TO-206AA), TO-46 (TO-206AB) Surface Mount UA and UB
Package Styles
Rev. V3
Electrical Characteristics (TA = +25oC unless otherwise specified)
Parameter
Test Conditions
Symbol Units
Min.
Max.
Collector - Emitter Breakdown Voltage
Collector - Emitter Cutoff Current
Collector - Base Cutoff Current
Emitter - Base Cutoff Current
Forward Current Transfer Ratio
Collector - Emitter Saturation Voltage
Base - Emitter Saturation Voltage
IC = 10 mA
VCE = 45 V dc
VCB = 60 V dc
VCB = 45 V dc
VEB = 6 V dc
VEB = 5 V dc
VCE = 5 V dc; IC = 1 µA dc
VCE = 5 V dc; IC = 10 µA dc
VCE = 5 V dc; IC = 100 µA dc
VCE = 5 V dc; IC = 500 µA dc
VCE = 5 V dc; IC = 1 mA dc
VCE = 5 V dc; IC = 10 mA dc
IC = 1.0 mA dc, IB = 100 µA dc
VCE = 5 V dc; IC = 100 µA dc
V(BR)CEO V dc
ICES nA dc
ICBO1 µA dc
ICBO2 nA dc
IEBO1 µA dc
IEBO2 nA dc
60
hFE -
VCE(SAT) Vdc
VBE(on) Vdc
45
200
225
250
250
225
0.5
5
10
5
10
2
500
675
800
800
800
0.3
0.7
Magnitude of Common Emitter Small-Signal IC = 50 µA dc; VCE = 5 V dc; 5 MHz | hfe |1
Short-Circuit Forward-Current Transfer Ratio IC = 500 µA dc; VCE = 5 V dc; 30 MHz | hfe |2
-
3.0
2.0
Collector - Base Cutoff Current
TA = =150oC
VCB = 45 V dc
ICBO3 µA dc
Forward - Current Transfer Ratio
VCE = 5 V dc; IC = 10 µA dc
hFE7
-
35
7.0
10
1
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com



2N2484
2N2484, 2N2484UA, 2N2484UB
NPN Low Power Silicon Transistor
Rev. V3
Parameter
Test Conditions
Symbol Units Min.
Small-Signal Open-Circuit Output Admittance IC = 1.0 mA dc; VCE = 5 V dc; f = 1 kHz
Small-Signal Open Circuit Reverse Voltage
Transfer Ratio
IC = 1.0 mA dc; VCE = 5 V dc; f = 1 kHz
hOE µmhos
hRE -
Small-Signal Short-Circuit Input Impedance IC = 1 mA dc; VCE = 5 V dc; f = 1 kHz
hIE
Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 1 mA dc; VCE = 5 V dc; f = 1 kHz
hfe
Open Circuit Output Capacitance
VCB = 5 V dc; IE = 0; 100 kHz ≤ f ≤ 1 MHz Cobo
Input Capacitance (Output Open-Circuited) VEB = 5 V dc; IC = 0; 100 kHz ≤ f ≤ 1 MHz Cibo
kΩ
-
pF
pF
3.5
250
Max.
40
8 x 10-4
24.0
900
5
6.0
Absolute Maximum Ratings (TA = +25oC unless otherwise specified)
Ratings
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current
Total Power Dissipation (1)
@ TA = +25°C
Operating & Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PT
TJ, TSTG
Value
60 V dc
60 V dc
6 V dc
50 mA dc
360 mW
-65°C to +200°C
Thermal Characteristics
Characteristics
Thermal Resistance, Junction to Ambient (2)
2N2484
2N2484UA
2N2484UB, UBC
Thermal Resistance, Junction to Solder Pad (2)
2N2484UA
2N2484UB, UBC
Symbol
RθJA
RθJSP
Max. Value
325°C/W
275°C/W
350°C/W
110°C/W
100°C/W
(1) For derating see figure 7, figure 8 and figure 9 of MIL-PRF-19500/376
(2) For thermal impedance see figure 10, 11, 12, 13 and 14 of MIL-PRF-19500/376.
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com





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