2N3441 Transistor Datasheet

2N3441 Datasheet PDF, Equivalent


Part Number

2N3441

Description

NPN Silicon Power Transistor

Manufacture

VPT

Total Page 5 Pages
Datasheet
Download 2N3441 Datasheet


2N3441
2N3441
NPN Silicon Power Transistor
Features
Available in JAN, JANTX, JANTXV per MIL-PRF-19500/369
TO-66 Package
Designed for General Purpose Switching and Amplifier
Applications
Rev. V2
Electrical Characteristics (TA = +25oC unless otherwise noted)
Parameter
Test Conditions
Symbol Units Min.
Collector - Emitter Breakdown Voltage
Collector - Emitter Cutoff Current
Emitter - Base Cutoff Current
IC = 100 mA dc
IC = 100 mA dc, RBE = 100 Ω
VBE = -1.5 V dc, IC = 100 mA dc
VBE = -1.5 V dc, VCE = 140 V dc
VEB = 7.0 V dc
V(BR)CEO
V(BR)CER
V(BR)CEX
V dc
ICEX1 µA dc
IEBO mA dc
140
150
160
Forward Current Transfer Ratio
Collector - Emitter Saturation Voltage
Emitter - Base Voltage (non-saturated)
VCE = 4.0 V dc, IC = 50 mA dc
VCE = 4.0 V dc, IC = 0.5 A dc
VCE = 4.0 V dc, IC = 1.0 A dc
IC = 0.5 A dc, IB = 50 mA dc
IC = 0.5 A dc, VCE = 4.0 V dc
hFE -
VCE(SAT) V dc
VBE V dc
50
25
10
Max.
20
1
100
1
1.7
Magnitude of Common Emitter Small-Signal
Short-Circuit Forward Current Transfer Ratio
VCE = 4.0 Vdc, IC = 0.5 A dc, f = 100 kHz
| hfe |
Open Circuit Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1 MHz Cobo
Small-Signal Short-Circuit Forward-Current
Transfer Ratio
VCE = 4 V dc, IC = 0.5 A dc, f = 1.0 kHz
hfe
pF
4
15
Collector - Emitter Cutoff Current
Forward Current Transfer Ratio
TA = +150oC
VBE = -1.5 V dc, VCE = 140 V dc
TA = -65oC
VCE = 4 V dc, IC = 0.5 A dc
ICEX2 mA dc
hFE4
-
15
40
300
100
5
1
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com

2N3441
2N3441
NPN Silicon Power Transistor
Absolute Maximum Ratings (TC = +25oC unless otherwise noted)
Ratings
Collector - Emitter Voltage
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Base Current
Collector Current
Total Power Dissipation @ TA = +25°C 1
Total Power Dissipation @ TC = +25°C 1
Operating & Storage Temperature Range
Symbol
VCEO
VCER
VCBO
VEBO
IB
IC
PT
PT
TJ, TSTG
Value
140 V dc
150 V dc
160 V dc
7.0 V dc
2.0 A dc
3.0 A dc
3.0 W
25 W
-65°C to +200°C
Thermal Characteristics
Characteristics
Thermal Resistance, Junction to Case 2
Thermal Resistance Junction to Ambient
Symbol
RθJC
RθJA
1. For derating see figures 2 and 3 of MIL-PRF-19500/369.
2. For thermal impedance see figure 4 of MIL-PRF-19500/369.
Max. Value
3°C/W
58.5°C/W
Rev. V2
Switching Characteristics
Turn-On Time
Turn-Off Time
Safe Operating Area
VCC = 30 Vdc, IC = 0.5 A dc, IB = 50 mA dc
VCC = 30 Vdc, IC = 0.5 A dc, IB1 = -IB2 = 50
mA dc
ton
toff
DC Tests:
Test 1:
Test 2:
Test 3:
TC = +25 °C, I Cycle, t = 1.0 s
IC = 3 A dc, VCE = 8.33 V dc
IC = 833 mA dc, VCE = 30 V dc,
IC = 178.5 mA dc, VCE = 140 V dc
µs
µs
8
15
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com


Features 2N3441 NPN Silicon Power Transistor Feat ures • Available in JAN, JANTX, JANTX V per MIL-PRF-19500/369 • TO-66 Packa ge • Designed for General Purpose Swi tching and Amplifier Applications Rev. V2 Electrical Characteristics (TA = + 25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. C ollector - Emitter Breakdown Voltage Co llector - Emitter Cutoff Current Emitte r - Base Cutoff Current IC = 100 mA dc IC = 100 mA dc, RBE = 100 Ω VBE = -1. 5 V dc, IC = 100 mA dc VBE = -1.5 V dc, VCE = 140 V dc VEB = 7.0 V dc V(BR)CE O V(BR)CER V(BR)CEX V dc ICEX1 µA dc IEBO mA dc 140 150 160 — — Forw ard Current Transfer Ratio Collector - Emitter Saturation Voltage Emitter - Ba se Voltage (non-saturated) VCE = 4.0 V dc, IC = 50 mA dc VCE = 4.0 V dc, IC = 0.5 A dc VCE = 4.0 V dc, IC = 1.0 A dc IC = 0.5 A dc, IB = 50 mA dc IC = 0.5 A dc, VCE = 4.0 V dc hFE - VCE(SAT) V dc VBE V dc 50 25 10 — — Max. — 20 1 — 100 — 1 1.7 Magnitude of Common Emitter Small-Signal Short-Circuit Forwa.
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