Power Amplifier. CMPA1D1E025F Datasheet

CMPA1D1E025F Amplifier. Datasheet pdf. Equivalent

CMPA1D1E025F Datasheet
Recommendation CMPA1D1E025F Datasheet
Part CMPA1D1E025F
Description Power Amplifier
Feature CMPA1D1E025F; CMPA1D1E025F 25 W, 13.75 - 14.5 GHz, 40 V, Ku-Band GaN MMIC, Power Amplifier Description Cree’s CMPA.
Manufacture CREE
Datasheet
Download CMPA1D1E025F Datasheet





CREE CMPA1D1E025F
CMPA1D1E025F
25 W, 13.75 - 14.5 GHz, 40 V, Ku-Band GaN MMIC, Power Amplifier
Description
Cree’s CMPA1D1E025F is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit (MMIC)
on a silicon carbide (SiC) substrate, using a 0.25 μm gate length fabrication
process. The Ku Band 25W MMIC is targeted for commercial Ku Band satellite
communications applications. It offers high gain and superior efficiency while
meets OQPSK linearity required for Satcom applications at 3dB backed off
Psat operations. This Ku Band MMIC is available in a 10 lead, 25 mm x 9.9 mm
metal/ceramic flanged package.
PN: CMPA1D1E025F
Package Type:440213
Typical Performance Over 13.75-14.5 GHz (TC = 25˚C)
Parameter
Small Signal Gain
13.75 GHz
24
14.0 GHz
24.5
Linear Output Power
24
23
Power Gain
21
21
Power Added Efficiency
22
20
14.25 GHz
24.5
21
20
18
14.5 GHz
24
20
20
18
Units
dB
W
dB
%
Note: Measured at -30 dBc, 1.6 MHz from carrier, in the CMPA1D1E025F-AMP under OQPSK modulation, 1.6 Msps, PN23, Alpha Filter = 0.2
Features
24 dB Small Signal Gain
40 W Typical Pulsed PSAT
Operation up to 40 V
20 W linear power under OQPSK
Class A/B high gain, high efficiency
50 ohm MMIC Ku Band high power amplifier
Applications
Satellite Communication Uplink
Rev 2.1 – April 2020
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com



CREE CMPA1D1E025F
CMPA1D1E025F
Absolute Maximum Ratings (not simultaneous)
Parameter
Symbol
Rating
Drain-source Voltage
VDSS
Gate-source Voltage
VGS
Power Dissipation
PDISS
Storage Temperature
TSTG
Operating Junction Temperature
TJ
Maximum Forward Gate Current
IGMAX
Soldering Temperature1
TS
Screw Torque
τ
120
-10, +2
94
-55, +150
225
10
245
40
Thermal Resistance, Junction to Case
RθJC
Case Operating Temperature
TC
1.5
-40, +85
Note: Refer to the Application Note on soldering at wolfspeed.com/rf/document-library
Units
VDC
VDC
W
˚C
˚C
mA
˚C
in-oz
˚C/W
˚C
2
Conditions
25˚C
25˚C
25˚C
PDISS = 94 W, 85˚C
CW, PDISS = 94 W
Electrical Characteristics (Frequency = 13.75 GHz to 14.5 GHz unless otherwise stated; TC = 25˚C)
Characteristics
DC Characteristics1
Gate Threshold
Gate Quiescent Voltage
Saturated Drain Current2
Drain-Source Breakdown Voltage
RF Characteristics3
Small Signal Gain
Input Return Loss
Output Return Loss
Symbol Min.
VGS(TH)
VQ
IDS
VBD
-3.4
13.1
100
S21
20.9
S11
S22
Typ.
-3.0
-2.7
18.2
24
-7
-7
Output Mismatch Stress
VSWR
Notes:
1 Measured on-wafer prior to packaging
2 Scaled from PCM data
3 Measured in the CMPA1D1E025F-AMP
Max. Units Conditions
-2.6 V
V
A
V
VDS = 10 V, ID = 18.2 mA
VDS = 40 V, ID = 240 mA
VDS = 6.0 V, VGS = 2.0 V
VGS = -8 V, ID = 18.2 mA
dB
-6
dB
-6
dB
5:1 Y
VDD = 40 V, IDQ = 240 mA, PIN = -15 dBm
VDD = 40 V, IDQ = 240 mA, PIN = -15 dBm
VDD = 40 V, IDQ = 240 mA, PIN = -15 dBm
No damage at all phase angles,
VDD = 40 V, IDQ = 240 mA, POUT = 41 dBm OQPSK
Rev 2.1 – April 2020
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com



CREE CMPA1D1E025F
CMPA1D1E025F
3
Electrical Characteristics Continued (TC = 25˚C)
Characteristics
RF Characteristics1,2,3,4
Power Added Efficiency
Power Added Efficiency
Power Gain
Power Gain
OQPSK Linearity
OQPSK Linearity
Symbol Min.
PAE1
PAE2
GP1
GP2
ACLR1
ACLR2
14.5
12.5
19.25
17.75
Typ.
20.5
18
23
22
-40
-38
Notes:
1 Measured in the CMPA1D1E025F-AMP
2 Under OQPSK modulated signal, 1.6 Msps, PN23, Alpha Filter = 0.2
3 Measured at PAVE = 41 dBm
4 Fixture loss de-embedded
Max. Units Conditions
%
VDD = 40 V, IDQ = 240 mA, Frequency = 13.75 GHz
%
VDD = 40 V, IDQ = 240 mA, Frequency = 14.5 GHz
dB
VDD = 40 V, IDQ = 240 mA, Frequency = 13.75 GHz
dB
VDD = 40 V, IDQ = 240 mA, Frequency = 14.5 GHz
-32
dBc VDD = 40 V, IDQ = 240 mA, Frequency = 13.75 GHz
-30.5 dBc VDD = 40 V, IDQ = 240 mA, Frequency = 14.5 GHz
Electrostatic Discharge (ESD) Classifications
Parameter
Human Body Model
Charge Device Model
Symbol
HBM
CDM
Class
1A (> 250 V)
II (200 < 500 V)
Test Methodology
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
Rev 2.1 – April 2020
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com





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