TK39N60X MOSFET Datasheet

TK39N60X Datasheet PDF, Equivalent


Part Number

TK39N60X

Description

Silicon N-Channel MOSFET

Manufacture

Toshiba

Total Page 10 Pages
PDF Download
Download TK39N60X Datasheet PDF


TK39N60X
MOSFETs Silicon N-Channel MOS (DTMOS-H)
TK39N60X
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.055 (typ.)
by used to Super Junction Structure : DTMOS
(2) High-speed switching properties with lower capacitance
(3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.9 mA)
3. Packaging and Internal Circuit
TK39N60X
1: Gate
2: Drain (Heatsink)
3: Source
TO-247
4. Absolute Maximum Ratings (Note) (Ta = 25unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Single-pulse avalanche energy
Avalanche current
Reverse drain current (DC)
Reverse drain current (pulsed)
Channel temperature
Storage temperature
Mounting torque
(Tc = 25)
(Note 1)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
VDSS
VGSS
ID
IDP
PD
EAS
IAR
IDR
IDRP
Tch
Tstg
TOR
600
±30
38.8
155
270
608
9.7
38.8
155
150
-55 to 150
0.8
V
A
W
mJ
A
Nm
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
2013-10
1 2014-02-28
Rev.3.0

TK39N60X
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25(initial), L = 11.3 mH, RG = 25 , IAR = 9.7 A
TK39N60X
Symbol
Rth(ch-c)
Rth(ch-a)
Max
0.463
50
Unit
/W
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2 2014-02-28
Rev.3.0


Features MOSFETs Silicon N-Channel MOS (DTMOS- H) TK39N60X 1. Applications • Switchi ng Voltage Regulators 2. Features (1) L ow drain-source on-resistance: RDS(ON) = 0.055 Ω (typ.) by used to Super Jun ction Structure : DTMOS (2) High-speed switching properties with lower capacit ance (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.9 mA) 3. Pac kaging and Internal Circuit TK39N60X 1: Gate 2: Drain (Heatsink) 3: Source TO-247 4. Absolute Maximum Ratings (No te) (Ta = 25 unless otherwise specif ied) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain curren t (pulsed) Power dissipation Single-pul se avalanche energy Avalanche current R everse drain current (DC) Reverse drain current (pulsed) Channel temperature S torage temperature Mounting torque (Tc = 25) (Note 1) (Note 1) (Note 2) ( Note 1) (Note 1) VDSS VGSS ID IDP PD E AS IAR IDR IDRP Tch Tstg TOR 600 ±30 38.8 155 270 608 9.7 38.8 155 150 -55 to 150 0.8 V A W mJ A  Nm Note: .
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