SSM3K339R MOSFET Datasheet

SSM3K339R Datasheet PDF, Equivalent


Part Number

SSM3K339R

Description

Silicon N-Channel MOSFET

Manufacture

Toshiba

Total Page 9 Pages
Datasheet
Download SSM3K339R Datasheet


SSM3K339R
MOSFETs Silicon N-Channel MOS
SSM3K339R
1. Applications
• Power Management Switches
• DC-DC Converters
2. Features
(1) 1.8-V gate drive voltage.
(2) Low drain-source on-resistance
: RDS(ON) = 145 m(typ.) (@VGS = 8.0 V, ID = 1.0 A)
RDS(ON) = 155 m(typ.) (@VGS = 4.5 V, ID = 1.0 A)
RDS(ON) = 160 m(typ.) (@VGS = 3.6 V, ID = 1.0 A)
RDS(ON) = 180 m(typ.) (@VGS = 2.5 V, ID = 0.5 A)
RDS(ON) = 220 m(typ.) (@VGS = 1.8 V, ID = 0.2 A)
3. Packaging and Pin Assignment
SOT-23F
SSM3K339R
1: Gate
2: Source
3: Drain
Start of commercial production
2014-02
1 2014-02-21
Rev.1.0

SSM3K339R
SSM3K339R
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 40 V
Gate-source voltage
VGSS
±12
Drain current (DC)
Drain current (pulsed)
(Note 1)
(Note 1), (Note 2)
ID
IDP
2.0 A
4.0
Power dissipation
(Note 3)
PD
1W
Power dissipation
(t = 10 s)
(Note 3)
2
Channel temperature
Tch 150
Storage temperature
Tstg -55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 150 .
Note 2: Pulse width (PW) 10 ms, duty 1%
Note 3: Device mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm ,Cu pad: 645 mm2)
Note:
Note:
The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables,
operators, soldering irons and other objects should be protected against anti-static discharge.
The channel-to-ambient thermal resistance, Rth(ch-a), and the drain power dissipation, PD, vary according to
the board material, board area, board thickness and pad area. When using this device, be sure to take heat
dissipation fully into account.
2 2014-02-21
Rev.1.0


Features MOSFETs Silicon N-Channel MOS SSM3K339R 1. Applications • Power Management Sw itches • DC-DC Converters 2. Features (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 145 mΩ (typ.) (@VGS = 8.0 V, ID = 1.0 A) RDS(ON) = 155 mΩ (typ.) (@VGS = 4 .5 V, ID = 1.0 A) RDS(ON) = 160 mΩ (t yp.) (@VGS = 3.6 V, ID = 1.0 A) RDS(ON) = 180 mΩ (typ.) (@VGS = 2.5 V, ID = 0.5 A) RDS(ON) = 220 mΩ (typ.) (@VGS = 1.8 V, ID = 0.2 A) 3. Packaging and P in Assignment SOT-23F SSM3K339R 1: Gat e 2: Source 3: Drain Start of commerci al production 2014-02 1 2014-02-21 Rev. 1.0 SSM3K339R 4. Absolute Maximum Rat ings (Note) (Unless otherwise specified , Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage V DSS 40 V Gate-source voltage VGSS ± 12 Drain current (DC) Drain current (p ulsed) (Note 1) (Note 1), (Note 2) ID IDP 2.0 A 4.0 Power dissipation (No te 3) PD 1W Power dissipation (t = 10 s) (Note 3) 2 Channel temperature Tch 150  Storage temperature Tstg -5.
Keywords SSM3K339R, datasheet, pdf, Toshiba, Silicon, N-Channel, MOSFET, SM3K339R, M3K339R, 3K339R, SSM3K339, SSM3K33, SSM3K3, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)