CUS10S40 Diode Datasheet

CUS10S40 Datasheet PDF, Equivalent


Part Number

CUS10S40

Description

Schottky Barrier Diode

Manufacture

Toshiba

Total Page 6 Pages
Datasheet
Download CUS10S40 Datasheet


CUS10S40
Schottky Barrier Diode Silicon Epitaxial
CUS10S40
1. Applications
• High-Speed Switching
2. Features
(1) Small package
(2) Low forward voltage: VF(2) = 0.45 V (typ.)
3. Packaging and Internal Circuit
USC
CUS10S40
1: Cathode
2: Anode
Start of commercial production
2013-09
1 2014-04-07
Rev.2.0

CUS10S40
CUS10S40
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Rating
Unit
Peak reverse voltage
VRM
40 V
Average rectified current
IO (Note 1)
1.0
A
Non-repetitive peak forward surge current
IFSM (Note 2)
5
A
Junction temperature
Tj 125
Storage temperature
Tstg
-55 to 125
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Note 2: Measured with a 10 ms pulse.
5. Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Forward voltage
Forward voltage
Reverse current
Total capacitance
Symbol
Test Condition
VF(1)
VF(2)
IR
Ct
IF = 0.5 A (Pulse test)
IF = 1 A (Pulse test)
VR = 40 V (Pulse test)
VR = 0 V, f = 1 MHz
Min Typ. Max Unit
0.35 0.40 V
0.45 0.50 V
  150 µA
120
pF
6. Marking
Marking Code
7C
Fig. 6.1 Marking
Part Number
CUS10S40
7. Usage Considerations
• Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs
more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both
forward and reverse power losses of SBDs should be considered for thermal and safety design.
2 2014-04-07
Rev.2.0


Features Schottky Barrier Diode Silicon Epitaxial CUS10S40 1. Applications • High-Spee d Switching 2. Features (1) Small packa ge (2) Low forward voltage: VF(2) = 0.4 5 V (typ.) 3. Packaging and Internal Ci rcuit USC CUS10S40 1: Cathode 2: Anode Start of commercial production 2013-0 9 1 2014-04-07 Rev.2.0 CUS10S40 4. Ab solute Maximum Ratings (Note) (Unless o therwise specified, Ta = 25 ) Chara cteristics Symbol Note Rating Unit Peak reverse voltage VRM 40 V Averag e rectified current IO (Note 1) 1.0 A Non-repetitive peak forward surge cu rrent IFSM (Note 2) 5 A Junction te mperature Tj 125  Storage temperat ure Tstg -55 to 125  Note: Using continuously under heavy loads (e.g. t he application of high temperature/curr ent/voltage and the significant change in temperature, etc.) may cause this pr oduct to decrease in the reliability si gnificantly even if the operating condi tions (i.e. operating temperature/curre nt/voltage, etc.) are within the absolute maximum ratings. Please desig.
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