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CUS10S40
Schottky Barrier Diode
Description
Schottky
Barrier Diode Silicon Epitaxial CUS10S40 1. Applications High-Speed Switching 2. Features (1) Small package (2) Low forward voltage: VF(2) = 0.45 V (typ.) 3. Packaging and Internal Circuit USC CUS10S40 1: Cathode 2: Anode Start of commercial production 2013-09 1 2014-04-07 Rev.2.0 CUS10S40 4. Absolute Maximum Ratings (Note) (Unless otherwise s...
Toshiba
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