EPC2033 Transistor Datasheet

EPC2033 Datasheet PDF, Equivalent


Part Number

EPC2033

Description

Enhancement Mode Power Transistor

Manufacture

EPC

Total Page 6 Pages
Datasheet
Download EPC2033 Datasheet


EPC2033
eGaN® FET DATASHEET
EPC2033 – Enhancement Mode Power Transistor
VDS , 150 V
RDS(on) , 7 mΩ
ID , 48 A
D
G
S
EPC2033
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very
low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG
and zero QRR. The end result is a device that can handle tasks where very high switching frequency,
and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings
PARAMETER
VDS Drain-to-Source Voltage (Continuous)
ID
Continuous (TA = 25°C, RθJA = 4°C/W)
Pulsed (25°C, TPULSE = 300 µs)
VGS
Gate-to-Source Voltage
Gate-to-Source Voltage
TJ Operating Temperature
TSTG Storage Temperature
VALUE
150
48
260
6
-4
-40 to 150
-40 to 150
UNIT
V
A
V
°C
EPC2033 eGaN® FETs are supplied only in
passivated die form with solder bumps.
Die Size: 4.6 mm x 2.6 mm
• High Frequency DC-DC Conversion
• Motor Drive
• Industrial Automation
• Class-D Audio
Thermal Characteristics
PARAMETER
TYP UNIT
RθJC Thermal Resistance, Junction-to-Case
0.45
RθJB Thermal Resistance, Junction-to-Board
3.9 °C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1)
45
Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.
See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
PARAMETER
Static Characteristics (TJ = 25°C unless otherwise stated)
TEST CONDITIONS
BVDSS
IDSS
IGSS
Drain-to-Source Voltage
Drain-Source Leakage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
VGS = 0 V, ID = 0.7 mA
VGS = 0 V, VDS = 120 V
VGS = 5 V
VGS = -4 V
VGS(TH)
Gate Threshold Voltage
VDS = VGS, ID = 9 mA
RDS(on)
Drain-Source On Resistance
VSD Source-Drain Forward Voltage
All measurements were done with substrate connected to source.
VGS = 5 V, ID = 25 A
IS = 0.5 A, VGS = 0 V
MIN TYP
150
0.1
1
0.1
0.8 1.4
5
1.9
MAX
0.5
8
0.5
2.5
7
UNIT
V
mA
mA
mA
V
mΩ
V
EPC – THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2019 |
|1

EPC2033
eGaN® FET DATASHEET
EPC2033
PARAMETER
Dynamic Characteristics (TJ = 25°C unless otherwise stated)
TEST CONDITIONS
CISS
CRSS
COSS
COSS(ER)
COSS(TR)
RG
QG
QGS
QGD
QG(TH)
QOSS
QRR
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance, Energy Related (Note 2)
Effective Output Capacitance, Time Related (Note 3)
Gate Resistance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge at Threshold
Output Charge
Source-Drain Recovery Charge
VDS = 120 V, VGS = 0 V
VDS = 0 to 120 V, VGS = 0 V
VDS = 120 V, VGS = 5 V, ID = 25 A
VDS = 120 V, ID = 25 A
VDS = 120 V, VGS = 0 V
All measurements were done with substrate connected to source.
Note 2: COSS(ER) is a fixed capacitance that gives the same stored energy as COSS while VDS is rising from 0 to 50% BVDSS.
Note 3: COSS(TR) is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 50% BVDSS.
MIN
TYP
1160
6
480
670
900
0.5
12
3.8
3.2
2.8
90
0
MAX
1400
720
15
135
UNIT
pF
Ω
nC
Figure 1: Typical Output Characteristics at 25°C
250250
200200
150150
100100
VGS = 5 V
VVGGSS
V=GS
VGS
=54VV
=3V
VVGGSS V=GS =42VV
VVGGSS = 3 V
VVGGSS = 2 V
Figure 2: Transfer Characteristics
250
200
150 25˚C
125˚C
100 VDS = 36 V
5050 50
0
0
00
11
VDS
-
VDDSr22aDinra-itno-t-oS-So33ouurrcceeVoVltoag44ltea(Vg)e
55
(V)
Figure 3: RDS(on) vs. VGS for Various Drain Currents
20
ID = 10 A
15
ID = 25 A
ID = 50 A
ID = 100 A
10
66
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS – Gate-to-Source Voltage (V)
Figure 4: RDS(on) vs. VGS for Various Temperatures
20
25˚C
15 125˚C
VIDD=S =253 AV
10
55
0
3.0 3.5 4.0 4.5 5.0
VGS – Gate-to-Source Voltage (V)
03.0
EPC – THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2019 |
3.5 4.0 4.5
VGS – Gate-to-Source Voltage (V)
5.0
|2


Features eGaN® FET DATASHEET EPC2033 – Enhanc ement Mode Power Transistor VDS , 150 V RDS(on) , 7 mΩ ID , 48 A D G S EPC 2033 EFFICIENT POWER CONVERSION HAL Ga llium Nitride’s exceptionally high el ectron mobility and low temperature coe fficient allows very low RDS(on), while its lateral device structure and major ity carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where v ery high switching frequency, and low o n-time are beneficial as well as those where on-state losses dominate. Maximu m Ratings PARAMETER VDS Drain-to-Sour ce Voltage (Continuous) ID Continuous (TA = 25°C, RθJA = 4°C/W) Pulsed (2 5°C, TPULSE = 300 µs) VGS Gate-to-S ource Voltage Gate-to-Source Voltage T J Operating Temperature TSTG Storage Te mperature VALUE 150 48 260 6 -4 -40 to 150 -40 to 150 UNIT V A V °C EPC203 3 eGaN® FETs are supplied only in pass ivated die form with solder bumps. Die Size: 4.6 mm x 2.6 mm • High Frequency DC-DC Conversion • Motor Drive • I.
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