EPC2029 Transistor Datasheet

EPC2029 Datasheet PDF, Equivalent


Part Number

EPC2029

Description

Enhancement Mode Power Transistor

Manufacture

EPC

Total Page 6 Pages
PDF Download
Download EPC2029 Datasheet PDF


EPC2029
eGaN® FET DATASHEET
EPC2029 – Enhancement Mode Power Transistor
VDS , 80 V
RDS(on) , 3.2 mΩ
ID , 48 A
D
G
S
EPC2029
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very
low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG
and zero QRR. The end result is a device that can handle tasks where very high switching frequency,
and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings
PARAMETER
VALUE
VDS
Drain-to-Source Voltage (Continuous)
Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C)
ID
Continuous (TA = 25°C, RθJA = 9°C/W)
Pulsed (25°C, TPULSE = 300 µs)
VGS
Gate-to-Source Voltage
Gate-to-Source Voltage
80
96
48
360
6
-4
TJ Operating Temperature
TSTG Storage Temperature
-40 to 150
-40 to 150
UNIT
V
A
V
°C
EPC2029 eGaN® FETs are supplied only in
passivated die form with solder bumps.
Die Size: 4.6 mm x 2.6 mm
• High Speed DC-DC Conversion
• Motor Drive
• Industrial Automation
• Synchronous Rectification
• Class-D Audio
Thermal Characteristics
PARAMETER
TYP UNIT
RθJC Thermal Resistance, Junction-to-Case
0.45
RθJB Thermal Resistance, Junction-to-Board
3.9 °C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1)
45
Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.
See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
PARAMETER
Static Characteristics (TJ = 25°C unless otherwise stated)
TEST CONDITIONS
BVDSS
IDSS
Drain-to-Source Voltage
Drain-Source Leakage
VGS = 0 V, ID = 0.9 mA
VGS = 0 V, VDS = 64 V
IGSS
VGS(TH)
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Threshold Voltage
VGS = 5 V
VGS = -4 V
VDS = VGS, ID = 12 mA
RDS(on)
Drain-Source On Resistance
VGS = 5 V, ID = 30 A
VSD Source-Drain Forward Voltage
All measurements were done with substrate connected to source.
IS = 0.5 A, VGS = 0 V
MIN TYP
80
0.1
1
0.1
0.8 1.4
2.5
1.6
MAX
0.6
9
0.6
2.5
3.2
UNIT
V
mA
mA
mA
V
mΩ
V
EPC – T HE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2019 |
|1

EPC2029
eGaN® FET DATASHEET
EPC2029
Dynamic Characteristics (TJ = 25°C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN TYP
CISS
CRSS
COSS
COSS(ER)
COSS(TR)
RG
QG
QGS
QGD
QG(TH)
QOSS
QRR
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance, Energy Related (Note 2)
Effective Output Capacitance, Time Related (Note 3)
Gate Resistance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge at Threshold
Output Charge
Source-Drain Recovery Charge
VDS = 40 V, VGS = 0 V
VDS = 0 to 40 V, VGS = 0 V
VDS = 40 V, VGS = 5 V, ID = 30 A
VDS = 40 V, ID = 30 A
VDS = 40 V, VGS = 0 V
1410
17
820
1090
1310
0.4
13
3.4
1.9
2.5
53
0
All measurements were done with substrate connected to source.
Note 2: COSS(ER) is a fixed capacitance that gives the same stored energy as COSS while VDS is rising from 0 to 50% BVDSS.
Note 3: COSS(TR) is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 50% BVDSS.
MAX
1690
1230
16
80
UNIT
pF
Ω
nC
Figure 1: Typical Output Characteristics at 25°C
350
300
250
200
150 VGS = 5 V
VGS = 4 V
100
VGS = 3 V
VGS = 2 V
50
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VDS – Drain-to-Source Voltage (V)
Figure 3: RDS(on) vs. VGS for Various Drain Currents
10
ID = 15 A
8 ID = 30 A
ID = 60 A
ID = 120 A
6
Figure 2: Transfer Characteristics
350
300
250
200 25˚C
125˚C
150 VDS = 3 V
100
50
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS – Gate-to-Source Voltage (V)
Figure 4: RDS(on) vs. VGS for Various Temperatures
10
8
25˚C
125˚C
VIDD=S =303 AV
6
44
22
0 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS – Gate-to-Source Voltage (V)
0
2.0
EPC – T HE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2019 |
2.5 3.0 3.5 4.0 4.5
VGS – Gate-to-Source Voltage (V)
5.0
|2


Features eGaN® FET DATASHEET EPC2029 – Enhanc ement Mode Power Transistor VDS , 80 V RDS(on) , 3.2 mΩ ID , 48 A D G S EP C2029 EFFICIENT POWER CONVERSION HAL G allium Nitride’s exceptionally high e lectron mobility and low temperature co efficient allows very low RDS(on), whil e its lateral device structure and majo rity carrier diode provide exceptionall y low QG and zero QRR. The end result i s a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate. Maxim um Ratings PARAMETER VALUE VDS Drai n-to-Source Voltage (Continuous) Drain- to-Source Voltage (up to 10,000 5 ms pu lses at 150°C) ID Continuous (TA = 2 5°C, RθJA = 9°C/W) Pulsed (25°C, TP ULSE = 300 µs) VGS Gate-to-Source Vo ltage Gate-to-Source Voltage 80 96 48 360 6 -4 TJ Operating Temperature TSTG Storage Temperature -40 to 150 -40 to 150 UNIT V A V °C EPC2029 eGaN® FE Ts are supplied only in passivated die form with solder bumps. Die Size: 4.6 .
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