eGaN® FET DATASHEET
EPC2029 – Enhancement Mode Power Transistor
VDS , 80 V RDS(on) , 3.2 mΩ ID , 48 A
D G
S
EPC2029
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and z...
