RF transistor. BFU550 Datasheet

BFU550 transistor. Datasheet pdf. Equivalent

Part BFU550
Description NPN wideband silicon RF transistor
Feature SOT143B BFU550 NPN wideband silicon RF transistor Rev. 2.1 — 17 April 2019 Product data sheet 1 P.
Manufacture NXP
Datasheet
Download BFU550 Datasheet




BFU550
BFU550
NPN wideband silicon RF transistor
Rev. 2.1 — 17 April 2019
Product data sheet
1 Product profile
1.1 General description
NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-
emitter SOT143B package.
The BFU550 is part of the BFU5 family of transistors, suitable for small signal to medium
power applications up to 2 GHz.
1.2 Features and benefits
Low noise, high breakdown RF transistor
AEC-Q101 qualified
Minimum noise figure (NFmin) = 0.7 dB at 900 MHz
Maximum stable gain 21 dB at 900 MHz
11 GHz fT silicon technology
1.3 Applications
Applications requiring high supply voltages and high breakdown voltages
Broadband amplifiers up to 2 GHz
Low noise amplifiers for ISM applications
ISM band oscillators
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 °C unless otherwise specified
Symbol Parameter
Conditions
VCB collector-base voltage open emitter
VCE collector-emitter voltage open base
shorted base
VEB emitter-base voltage
open collector
IC collector current
Ptot
total power dissipation
Tsp ≤ 87 °C
hFE DC current gain
IC = 15 mA; VCE = 8 V
Cc
collector capacitance
VCB = 8 V; f = 1 MHz
fT transition frequency IC = 25 mA; VCE = 8 V; f = 900 MHz
Min Typ Max Unit
--
24 V
--
12 V
--
24 V
--
2V
- 15 50 mA
[1] -
-
450 mW
60 95 200
- 0.72 -
pF
- 11 -
GHz



BFU550
NXP Semiconductors
BFU550
NPN wideband silicon RF transistor
Symbol
Gp(max)
NFmin
PL(1dB)
Parameter
maximum power gain
minimum noise figure
output power at 1 dB gain
compression
Conditions
IC = 15 mA; VCE = 8 V; f = 900 MHz
IC = 1 mA; VCE = 8 V; f = 900 MHz; ΓS = Γopt
IC = 25 mA; VCE = 8 V; ZS = ZL = 50 Ω; f = 900
MHz
Min Typ Max Unit
[2] -
21 -
dB
- 0.7 -
dB
- 13.5 -
dBm
[1] Tsp is the temperature at the solder point of the collector lead.
[2] If K > 1 then Gp(max) is the maximum power gain. If K < 1 then Gp(max) = MSG.
2 Pinning information
Table 2. Discrete pinning
Pin Description
1 collector
2 base
3 emitter
4 emitter
Simplified outline Graphic symbol
43
12
1
2
3, 4
aaa-010459
3 Ordering information
Table 3. Ordering information
Type number
Package
Name Description
BFU550
OM7962
- plastic surface-mounted package; 4 leads
- Customer evaluation kit for BFU520, BFU530 and BFU550 [1]
Version
SOT143B
-
[1] The customer evaluation kit contains the following:
Unpopulated RF amplifier Printed-Circuit Board (PCB)
Unpopulated RF amplifier Printed-Circuit Board (PCB) with emitter degeneration
– Four SMA connectors for fitting unpopulated Printed-Circuit Board (PCB)
– BFU520, BFU530 and BFU550 samples
– USB stick with data sheets, application notes, models, S-parameter and
noise files
4 Marking
Table 4. Marking
Type number
BFU550
Marking
*TC
Description
* = t : made in Malaysia
* = w : made in China
BFU550
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2.1 — 17 April 2019
© NXP B.V. 2019. All rights reserved.
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