SZNUP4301MR6 Diode Datasheet

SZNUP4301MR6 Datasheet, PDF, Equivalent


Part Number

SZNUP4301MR6

Description

Low Capacitance Diode

Manufacture

ON Semiconductor

Total Page 4 Pages
Datasheet
Download SZNUP4301MR6 Datasheet


SZNUP4301MR6
NUP4301MR6,
SZNUP4301MR6
Low Capacitance Diode
Array for ESD Protection in
Four Data Lines
SZ/NUP4301MR6T1G is a micro−integrated device designed to
provide protection for sensitive components from possible harmful
electrical transients; for example, ESD (electrostatic discharge).
Features
Low Capacitance (1.5 pf Maximum Between I/O Lines)
Single Package Integration Design
Provides ESD Protection for JEDEC Standards JESD22
Machine Model = Class C
Human Body Model = Class 3B
Protection for IEC61000−4−2 (Level 4)
8.0 kV (Contact)
15 kV (Air)
Ensures Data Line Speed and Integrity
Fewer Components and Less Board Space
Direct the Transient to Either Positive Side or to the Ground
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
This is a Pb−Free Device*
Applications
USB 1.1 and 2.0 Data Line Protection
T1/E1 Secondary IC Protection
T3/E3 Secondary IC Protection
HDSL, IDSL Secondary IC Protection
Video Line Protection
Microcontroller Input Protection
Base Stations
I2C Bus Protection
http://onsemi.com
SC−74
CASE 318F
PIN CONFIGURATION
AND SCHEMATIC
I/O 1
VN 2
1/O 3
6 I/O
5 VP
4 I/O
MARKING DIAGRAM
64M G
G
1
64 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location.
*Date Code orientation may vary depending up-
on manufacturing location.
ORDERING INFORMATION
Device
Package
NUP4301MR6T1G
SC−74
(Pb−Free)
SZNUP4301MR6T1G SC−74
(Pb−Free)
Shipping
3,000 /
Tape & Reel
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 7
1
Publication Order Number:
NUP4301MR6T1/D

SZNUP4301MR6
NUP4301MR6, SZNUP4301MR6
MAXIMUM RATINGS (Each Diode) (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
Forward Current
Peak Forward Surge Current
Repetitive Peak Reverse Voltage
Average Rectified Forward Current (Note 1) (averaged over any 20 ms period)
Repetitive Peak Forward Current
Non−Repetitive Peak Forward Current
t = 1.0 ms
t = 1.0 ms
t = 1.0 S
VR
IF
IFM(surge)
VRRM
IF(AV)
IFRM
IFSM
70
200
500
70
715
450
2.0
1.0
0.5
Vdc
mAdc
mAdc
V
mA
mA
A
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0  0.75  0.062 in.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Lead Solder Temperature, Maximum 10 Seconds Duration
Junction Temperature
Storage Temperature
Symbol
RqJA
TL
TJ
Tstg
Max
556
260
−40 to +150
−55 to +150
Unit
°C/W
°C
°C
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Each Diode)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 mA)
V(BR)
70
Vdc
Reverse Voltage Leakage Current
(VR = 70 Vdc)
(VR = 25 Vdc, TJ = 150°C)
(VR = 70 Vdc, TJ = 150°C)
Capacitance (between I/O pins)
(VR = 0 V, f = 1.0 MHz)
IR mAdc
− − 2.5
− − 30
− − 50
CD pF
− 0.8 1.5
Capacitance (between I/O pin and ground)
(VR = 0 V, f = 1.0 MHz)
CD pF
− 1.6 3
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF
mVdc
− 715
− 855
− 1000
− 1250
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
3. Include SZ-prefix devices where applicable.
http://onsemi.com
2


Features NUP4301MR6, SZNUP4301MR6 Low Capacitanc e Diode Array for ESD Protection in Fou r Data Lines SZ/NUP4301MR6T1G is a micr o−integrated device designed to provi de protection for sensitive components from possible harmful electrical transi ents; for example, ESD (electrostatic d ischarge). Features • Low Capacitance (1.5 pf Maximum Between I/O Lines) • Single Package Integration Design • Provides ESD Protection for JEDEC Stand ards JESD22 Machine Model = Class C Hum an Body Model = Class 3B • Protection for IEC61000−4−2 (Level 4) 8.0 kV (Contact) 15 kV (Air) • Ensures Data Line Speed and Integrity • Fewer Comp onents and Less Board Space • Direct the Transient to Either Positive Side o r to the Ground • SZ Prefix for Autom otive and Other Applications Requiring Unique Site and Control Change Requirem ents; AEC−Q101 Qualified and PPAP Cap able • This is a Pb−Free Device* Ap plications • USB 1.1 and 2.0 Data Lin e Protection • T1/E1 Secondary IC Protection • T3/E3 Secondary IC Protection • HDSL, IDSL Sec.
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