2SK1669 MOSFET Datasheet

2SK1669 Datasheet, PDF, Equivalent


Part Number

2SK1669

Description

Silicon N-Channel MOSFET

Manufacture

Renesas

Total Page 7 Pages
Datasheet
Download 2SK1669 Datasheet


2SK1669
2SK1669
Silicon N Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
Built-in fast recovery diode (trr = 90 ns)
Suitable for motor control, switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
G
1
2
3
REJ03G0966-0200
(Previous: ADE-208-1310)
Rev.2.00
Sep 07, 2005
D
1. Gate
2. Drain
(Flange)
3. Source
S
Rev.2.00 Sep 07, 2005 page 1 of 6

2SK1669
2SK1669
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Symbol
VDSS
VGSS
ID
ID(pulse)*1
IDR
Pch*2
Tch
Tstg
Ratings
250
±30
30
120
30
125
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics
Item
Symbol
Drain to source breakdown voltage V(BR)DSS
Gate to source breakdown voltage V(BR)GSS
Gate to source leak current
IGSS
Zero gate voltage drain current
IDSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on state
resistance
RDS(on)
Forward transfer admittance
|yfs|
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Body to drain diode forward voltage VDF
Body to drain diode reverse recovery
time
trr
Note: 3. Pulse test
Min
250
±30
2.0
12
Typ
0.075
Max
±10
250
3.0
0.095
20
3100
1330
190
45
170
270
150
1.0
90
Unit
V
V
µA
µA
V
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 200 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 15 A, VGS = 10 V *3
S ID = 15 A, VDS = 10 V *3
pF VDS = 10 V, VGS = 0,
pF f = 1 MHz
pF
ns ID = 15 A, VGS = 10 V,
ns RL = 2
ns
ns
V IF = 30 A, VGS = 0
ns IF = 30 A, VGS = 0,
diF/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6


Features 2SK1669 Silicon N Channel MOS FET Applic ation High speed power switching Featur es • Low on-resistance • High speed switching • Low drive current • Bu ilt-in fast recovery diode (trr = 90 ns ) • Suitable for motor control, switc hing regulator and DC-DC converter Outl ine RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) G 1 2 3 REJ03G09 66-0200 (Previous: ADE-208-1310) Rev.2. 00 Sep 07, 2005 D 1. Gate 2. Drain (Fla nge) 3. Source S Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1669 Absolute Maximum Ratings Item Drain to source voltage G ate to source voltage Drain current Dra in peak current Body to drain diode rev erse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle 1% 2. Value at TC = 25°C Symbol VDS S VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tst g Ratings 250 ±30 30 120 30 125 150 55 to +150 (Ta = 25°C) Unit V V A A A W °C °C Electrical Characteristic s Item Symbol Drain to source breakdown voltage V(BR)DSS Gate to source breakdown.
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