BTD2118T3 Transistor Datasheet

BTD2118T3 Datasheet, PDF, Equivalent


Part Number

BTD2118T3

Description

Silicon NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 5 Pages
Datasheet
Download BTD2118T3 Datasheet


BTD2118T3
CYStech Electronics Corp.
Silicon NPN Epitaxial Planar Transistor
BTD2118T3
Spec. No. : C847T3
Issued Date : 2007.06.26
Revised Date :
Page No. : 1/5
Description
High BVCEO
High current capability
Pb-free package
Symbol
BTD2118T3
Outline
TO-126
BBase
CCollector
EEmitter
ECB
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @TA=25
Power Dissipation @TC=25
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Note : Single Pulse , Pw380μs,Duty2%.
BTD2118T3
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
PD
RθJA
RθJC
Tj
Tstg
Limits
80
30
7
5
8 (Note)
1
15
125
8.33
150
-55~+150
Unit
V
V
V
A
A
W
W
°C/W
°C/W
°C
°C
CYStek Product Specification

BTD2118T3
CYStech Electronics Corp.
Spec. No. : C847T3
Issued Date : 2007.06.26
Revised Date :
Page No. : 2/5
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
80
30
7
-
-
-
-
-
260
300
200
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
150
-
Max.
-
-
-
1
1
0.5
0.6
1.2
-
600
-
-
50
Unit
V
V
V
µA
µA
V
V
V
-
-
-
MHz
pF
Test Conditions
IC=50µA, IE=0
IC=1mA, IB=0
IE=50µA, IC=0
VCB=80V, IE=0
VEB=6V, IC=0
IC=3A, IB=100mA
IC=3A, IB=60mA
IC=3A, IB=100mA
VCE=2V, IC=20mA
VCE=2V, IC=500mA
VCE=2V, IC=2A
VCE=6V, IC=500mA
VCB=10V, IE=0, f=1MHz
*Pulse Test: Pulse Width 380µs, Duty Cycle2%
Ordering Information
Device
BTD2118T3
Package
TO-126
(Pb-free)
Shipping
250 pcs / bag, 10 bags / box
Marking
D2118
BTD2118T3
CYStek Product Specification


Features CYStech Electronics Corp. Silicon NPN Ep itaxial Planar Transistor BTD2118T3 Sp ec. No. : C847T3 Issued Date : 2007.06. 26 Revised Date : Page No. : 1/5 Descr iption • High BVCEO • High current capability • Pb-free package Symbol B TD2118T3 Outline TO-126 B:Base C Collector E:Emitter ECB Absolute M aximum Ratings (Ta=25°C) Parameter Col lector-Base Voltage Collector-Emitter V oltage Emitter-Base Voltage Collector C urrent (DC) Collector Current (Pulse) P ower Dissipation @TA=25℃ Power Dissip ation @TC=25℃ Thermal Resistance, Jun ction to Ambient Thermal Resistance, Ju nction to Case Junction Temperature Sto rage Temperature Note : Single Pulse , Pw≦380μs,Duty≦2%. BTD2118T3 Symbo l VCBO VCEO VEBO IC ICP PD PD RθJA Rθ JC Tj Tstg Limits 80 30 7 5 8 (Note) 1 15 125 8.33 150 -55~+150 Unit V V V A A W W °C/W °C/W °C °C CYStek Prod uct Specification CYStech Electronics Corp. Spec. No. : C847T3 Issued Date : 2007.06.26 Revised Date : Page No. : 2/5 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BV.
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