BTD2150FP Transistor Datasheet

BTD2150FP Datasheet, PDF, Equivalent


Part Number

BTD2150FP

Description

Low Vcesat NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 6 Pages
Datasheet
Download BTD2150FP Datasheet


BTD2150FP
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD2150FP
BVCEO
IC
RCESAT
Spec. No. : C848FP
Issued Date : 2011.09.14
Revised Date : 2011.11.22
Page No. : 1/6
50V
3A
125mΩ typ.
Features
Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A
Excellent current gain characteristics
Complementary to BTB1424FP
Pb-free lead plating package
Symbol
BTD2150FP
Outline
TO-220FP
BBase
CCollector
EEmitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Power Dissipation(TA=25)
Power Dissipation(TC=25)
Operating Junction and Storage Temperature Range
Note : *1. Single Pulse Pw=10ms
BTD2150FP
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
Tj ; Tstg
Limits
50
50
6
3
7 *1
2
30
-55~+150
Unit
V
A
W
°C
CYStek Product Specification

BTD2150FP
CYStech Electronics Corp.
Spec. No. : C848FP
Issued Date : 2011.09.14
Revised Date : 2011.11.22
Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VCE(sat)
*RCE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
50
50
6
-
-
-
-
-
-
-
250
270
200
-
-
Typ. Max. Unit
Test Conditions
- - V IC=50µA, IE=0
- - V IC=1mA, IB=0
- - V IE=50µA, IC=0
- 1 µA VCB=50V, IE=0
- 1 µA VEB=6V, IC=0
- 120 mV IC=500mA, IB=50mA
- 0.3 V IC=1A, IB=10mA
0.25 0.5
V IC=2A, IB=100mA
125 250 mΩ IC=2A, IB=100mA
- 1.4 V IC=2A, IB=200mA
- - - VCE=2V, IC=20mA
- 560 - VCE=2V, IC=100mA
- - - VCE=2V, IC=1A
90 - MHz VCE=5V, IC=0.5A, f=100MHz
13 - pF VCB=10V, f=1MHz
*Pulse Test : Pulse Width 380µs, Duty Cycle2%
Ordering Information
Device
BTD2150FP
Package
TO-220FP
(Pb-free lead plating package)
Shipping
50 pcs / tube, 40 tubes / boxes
BTD2150FP
CYStek Product Specification


Features CYStech Electronics Corp. Low Vcesat NP N Epitaxial Planar Transistor BTD2150FP BVCEO IC RCESAT Spec. No. : C848FP I ssued Date : 2011.09.14 Revised Date : 2011.11.22 Page No. : 1/6 50V 3A 125mΩ typ. Features • Low VCE(sat), VCE(s at)=0.25 V (typical), at IC / IB = 2A / 0.2A • Excellent current gain charac teristics • Complementary to BTB1424F P • Pb-free lead plating package Sym bol BTD2150FP Outline TO-220FP B:B ase C:Collector E:Emitter BCE Abs olute Maximum Ratings (Ta=25°C) Parame ter Collector-Base Voltage Collector-Em itter Voltage Emitter-Base Voltage Coll ector Current(DC) Collector Current(Pul se) Power Dissipation(TA=25℃) Power D issipation(TC=25℃) Operating Junction and Storage Temperature Range Note : * 1. Single Pulse Pw=10ms BTD2150FP Symb ol VCBO VCEO VEBO IC ICP Pd Tj ; Tstg Limits 50 50 6 3 7 *1 2 30 -55~+150 Un it V A W °C CYStek Product Specificat ion CYStech Electronics Corp. Spec. N o. : C848FP Issued Date : 2011.09.14 Revised Date : 2011.11.22 Page No. : 2/6 Chara.
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