BTD4512F3 Transistor Datasheet

BTD4512F3 Datasheet, PDF, Equivalent


Part Number

BTD4512F3

Description

Low Vcesat NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 8 Pages
Datasheet
Download BTD4512F3 Datasheet


BTD4512F3
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD4512F3
Spec. No. : C821F3
Issued Date : 2011.12.02
Revised Date :
Page No. : 1/ 8
Description
The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting
transistor shows exceptional high gain performance coupled with very low saturation voltage.
Features
Very low collector-to-emitter saturation voltage
Fast switching speed
High current gain characteristic
Large current capability
RoHS compliant package
Applications
CCFL drivers
Voltage regulators
Relay drivers
High efficiency low voltage switching applications
Symbol
BTD4512F3
Outline
TO-263
BBase
CCollector
EEmitter
BTD4512F3
BCE
CYStek Product Specification

BTD4512F3
CYStech Electronics Corp.
Spec. No. : C821F3
Issued Date : 2011.12.02
Revised Date :
Page No. : 2/ 8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage (IE=0)
Collector-Emitter Voltage (IB=0)
Emitter-Base Voltage (IC=0)
Collector Current (DC)
Collector Current (Pulse)
Base Current
Power Dissipation @ TA=25
Power Dissipation @ TC=25
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PD
PD
RθJA
RθJC
Tj
Tstg
Limits
150
60
7
7
12 (Note 1)
2
1.65
40
75.8
3.125
150
-55~+150
Unit
V
V
V
A
A
W
°C/W
°C/W
°C
°C
Note : 1. Single Pulse , Pw380μs,Duty2%.
Characteristics (Ta=25°C)
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VCE(sat) 3
*VCE(sat) 4
*VCE(sat) 5
*VCE(sat) 6
*VCE(sat) 7
*VBE(sat)
*hFE 1
*hFE 2
*hFE 3
*hFE 4
fT
Cob
ton
toff
Min.
150
60
7
-
-
-
-
-
-
-
-
-
-
200
200
200
40
-
-
-
-
Typ.
-
-
-
-
-
14
58
94
118
185
215
260
0.9
-
-
-
-
150
54
45
630
Max.
-
-
-
100
100
25
70
120
180
260
300
400
1.2
-
500
-
-
-
-
-
-
Unit
V
V
V
nA
nA
mV
mV
mV
mV
mV
mV
mV
V
-
-
-
-
MHz
pF
ns
ns
Test Conditions
IC=100μA, IE=0
IC=1mA, IB=0
IC=100μA, IC=0
VCB=150V, IE=0
VEB=7V, IC=0
IC=100mA, IB=5mA
IC=1A, IB=50mA
IC=1A, IB=10mA
IC=2A, IB=40mA
IC=4A, IB=400mA
IC=4A, IB=80mA
IC=5A, IB=200mA
IC=2A, IB=100mA
VCE=2V, IC=10mA
VCE=2V, IC=500mA
VCE=2V, IC=1A
VCE=2V, IC=10A
VCE=10V, IC=50mA
VCB=10V, f=1MHz
VCC=10V, IC=10IB1=-10IB2=1A,
RL=10Ω
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
BTD4512F3
CYStek Product Specification


Features CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD4512F3 Spec. No. : C821F3 Issued Date : 2011. 12.02 Revised Date : Page No. : 1/ 8 D escription The device is manufactured i n NPN planar technology by using a “B ase Island” layout. The resulting tra nsistor shows exceptional high gain per formance coupled with very low saturati on voltage. Features • Very low coll ector-to-emitter saturation voltage • Fast switching speed • High current gain characteristic • Large current c apability • RoHS compliant package A pplications • CCFL drivers • Voltag e regulators • Relay drivers • High efficiency low voltage switching appli cations Symbol BTD4512F3 Outline TO- 263 B:Base C:Collector E:Emitter BTD4512F3 BCE CYStek Product Specific ation CYStech Electronics Corp. Spec. No. : C821F3 Issued Date : 2011.12.02 Revised Date : Page No. : 2/ 8 Absolut e Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage (IE=0) Collector-Emitter Voltage (IB=0) Emitter-Base Voltage (IC=0) C.
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