BTNA29N3 Transistor Datasheet

BTNA29N3 Datasheet, PDF, Equivalent


Part Number

BTNA29N3

Description

General Purpose NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 8 Pages
Datasheet
Download BTNA29N3 Datasheet


BTNA29N3
CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTNA29N3
Spec. No. : C848N3-A
Issued Date : 2004.03.26
Revised Date : 2018.02.07
Page No. : 1/9
Description
The BTNA29N3 is a darlington amplifier transistor
Pb-free lead plating and halogen-free package
Symbol
BTNA29N3
C
Outline
SOT-23
C
B
BBase
CCollector
EEmitter
E
B
E
Ordering Information
Device
BTNA29N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
BTD2150N3
CYStek Product Specification

BTNA29N3
CYStech Electronics Corp.
Spec. No. : C848N3-A
Issued Date : 2004.03.26
Revised Date : 2018.02.07
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Symbol
VCBO
VCES
VEBO
IC
ICP
PD
Tj
Tstg
Limits
100
100
12
0.5
2
500 (Note)
-55~+150
-55~+150
Unit
V
V
V
A
A
mW
°C
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress
limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation
is not implied, damage may occur and reliability may be affected.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note)
Symbol
RθJC
RθJA
Value
190
250
Unit
°C/W
Note : Device is mounted on an FR-4 PCB, single sided, 1oz. copper, tin plated, mounting pad for collector 15mm ×15 mm.
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCES
BVEBO
ICBO
ICES
IEBO
*VCE(sat)
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(on)
*hFE 1
*hFE 2
*hFE 3
fT
Cob
Min.
100
100
12
-
-
-
-
-
-
-
-
10K
15K
1K
125
-
Typ.
145
135
18
-
-
-
0.71
0.84
-
1.4
1.35
-
-
-
200
5
Max.
-
-
-
100
500
100
1.0
1.1
1.2
1.8
2.0
-
-
-
-
8
Unit
V
V
V
nA
nA
nA
V
V
V
V
V
MHz
pF
Test Conditions
IC=100μA
IC=100μA, VBE=0V
IE=10μA
VCB=80V
VCE=80V
VEB=10V
IC=10mA, IB=0.01mA
IC=100mA, IB=0.1mA
IC=500mA, IB=5mA
IC=100mA, IB=0.1mA
VCE=5V, IC=100mA
VCE=5V, IC=10mA
VCE=5V, IC=100mA
VCE=5V, IC=500mA
VCE=5V, IC=10mA, f=100MHz
VCB=10V, f=100MHz
*Pulse Test: Pulse Width 300μs, Duty Cycle2%
BTD2150N3
CYStek Product Specification


Features CYStech Electronics Corp. General Purpos e NPN Epitaxial Planar Transistor BTNA2 9N3 Spec. No. : C848N3-A Issued Date : 2004.03.26 Revised Date : 2018.02.07 P age No. : 1/9 Description • The BTNA 29N3 is a darlington amplifier transist or • Pb-free lead plating and halogen -free package Symbol BTNA29N3 C Outl ine SOT-23 C B B:Base C:Collector E:Emitter E B E Ordering Informa tion Device BTNA29N3-0-T1-G Package SO T-23 (Pb-free lead plating and halogen- free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoH S compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for n o rank products Product name BTD2150N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C848N3- A Issued Date : 2004.03.26 Revised Date : 2018.02.07 Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter C ollector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collect.
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