SD6030AD DIODE Datasheet

SD6030AD Datasheet, PDF, Equivalent


Part Number

SD6030AD

Description

FAST RECOVER EPITAXIAL DIODE

Manufacture

STMC

Total Page 2 Pages
Datasheet
Download SD6030AD Datasheet


SD6030AD
SD6030ADTO3P
300V FRED DISCRETE DEVICE
FAST RECOVER EPITAXIAL DIODE FRED
Features
Planar epitaxial chips
Using high temperature Pt diffusion process
Very short recovery time
Extremely low switching losses
Low IRM values
Soft recovery behaviour
100% tested
Applications
Diode for high frequency switching devices
Anti saturation diode
Snubber diode
Free wheeling diode in converters and motor control circuits
Rectifiers in switch mode power supplies (SMPS)
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
VRRM = 300 V
IFAVM = 60 A
VFtyp=1.1VIF=30A,TVJ=25℃)
trr <40 nsIF = 1 A; di/dt = 200 A/s
Package
TO3P
Absolute Maximum Ratings
Symbol
Parameter
VRRM
IF(AV)
IFRM
Peak Repetitive Reverse Voltage
Diode Continuous Forward Current ( TC=100 )
Repetitive Peak Surge Current (20kHz Square Wave)
IFSM
TJ
Nonrepetitive Peak Surge Current for Per Diode (Halfwave 1 Phase
60Hz)
Operating Junction Temperature Range
TSTG
Storage Temperature Range
Value
300
60
120
300
-55 to +150
-55 to +150
Units
V
A
A
A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified for Per Diode)
Symbol
VR
VF
IRM
Parameter
Test Conditions Min.
Cathode to Anode Breakdown Voltage IR = 100µA
Diode Forward Voltage
Diode Forward Voltage
IF=30A TC=25
IF=30A TC=125
Maximum Reverse Leakage Current
VR=300V TC=25
VR=300V TC=125
300
Typ. Max. Units
1.10 1.20
0.95 1.15
10
100
V
V
µA
µA
No. 1 Total 2
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SD6030AD
SD6030ADTO3P
300V FRED DISCRETE DEVICE
DYNAMIC RECOVERY CHARACTERISTICS(TJ = 25 °C unless otherwise specified)
Symbol
IRRM
Qrr
trr
S
IRRM
Qrr
trr
S
Parameter
Diode Peak Reverse Recovery Current
Reverse recovery charge
(Area Under the Curve Defined by IRRM
and trr).
Diode Reverse Recovery Time
S= tb/ta
Diode Peak Reverse Recovery Current
Reverse recovery charge
(Area Under the Curve Defined by IRRM
and trr).
Diode Reverse Recovery Time
S= tb/ta
Test Conditions
VDD=100V;IF=1A;
dif/dt=200A/µS;
See Fig.4
VDD=150V;IF=30A;
dif/dt=500A/µS;
See Fig.4
Min.
Typ.
3.6
Max.
Units
A
66 nc
37 40
0.81
16
ns
A
710 nc
63 85
0.82
ns
Fig.1 Forward Current vs Forward Voltage
Fig.2 Reverse Current vs Reverse Voltage
Fig.3 trr Test Circuit
Fig.4 trr Waveforms and Definitions
No. 2 Total 2
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Features SD6030AD(TO3P) 300V FRED DISCRETE DE VICE FAST RECOVER EPITAXIAL DIODE (F RED) Features  Planar epitaxial c hips  Using high temperature Pt diff usion process  Very short recovery t ime  Extremely low switching losses  Low IRM values  Soft recovery be haviour  100% tested Applications Diode for high frequency switching de vices  Anti saturation diode  Snu bber diode  Free wheeling diode in c onverters and motor control circuits Rectifiers in switch mode power suppl ies (SMPS)  Inductive heating and me lting  Uninterruptible power supplie s (UPS)  Ultrasonic cleaners and wel ders VRRM = 300 V IFAVM = 60 A VF( typ)=1.1V(IF=30A,TVJ=25℃) trr <40 ns(IF = 1 A; di/dt = 200 A/s) Package TO3P Absolute Maximum Ratings Symbol Parameter VRRM IF(AV) IFRM Peak Repetitive Reverse Voltage Diode C ontinuous Forward Current ( TC=100 ℃) Repetitive Peak Surge Current (20kHz S quare Wave) IFSM TJ Nonrepetitive Peak Surge Current for Per Diode (Halfwave 1 Phase 60Hz) Operating Junction Tempe.
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