P-Channel MOSFET. 4435 Datasheet

4435 MOSFET. Datasheet pdf. Equivalent

4435 Datasheet
Recommendation 4435 Datasheet
Part 4435
Description P-Channel MOSFET
Feature 4435;  P-channel Enhancement Mode MOSFET           The   uses  advanced  trench  technology  to  provide .
Manufacture CXW
Datasheet
Download 4435 Datasheet




CXW 4435
 P-channel Enhancement Mode MOSFET
 
 
 
 
  The   uses  advanced  trench  technology  to 
provide  excellent  RDS(ON)  and  low  gate  charge.  This 
device  is  suitable  for  use  as  a  load  switch  or  in    PWM 
applications. 
 
GENERAL FEATURES 
RDS(ON) < 
RDS(ON) < 
Ω @
Ω @ 
 
 
High Power and current handing capability 
Lead free product is acquired 
Surface Mount Package 
  
Application 
PWM applications 
Load switch 
Power management 
 
4435
DATASHEET
3424
 
D
G
S
S1
S2
S3
G4
   8 D
7D
6D
5D
Marking and pin assignment
 
ABSOLUTE MAXIMUM RATINGS(TA=25unless otherwise noted) 
Parameter
Drain-source Voltage
Gate-source Voltage
Drain Current
TA=25@ Steady State
TA=70@ Steady State
 
Pulsed Drain Current A
 
  Total Power Dissipation @ TA=25
 
Thermal Resistance Junction-to-Ambient @ Steady State B
Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
RθJA
TJ ,TSTG
Maximum
-30
±20
-10
-8
-50
3.0
42
-55+150
Unit
V
V
A
A
W
/ W
                            
1 
                         



CXW 4435
 P-channel Enhancement Mode MOSFET
 
 
 
 
ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted) 
4435
DATASHEET
3424
Parameter
Symbol
Conditions
Min Typ Max Units
Static Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
VSD
VGS= 0V, ID=-250μA
VDS=-30V,VGS=0V,TC=25
VGS= ±20V, VDS=0V
VDS= VGS, ID=-250μA
VGS= -10V, ID=-10A
VGS= -4.5V, ID=-5.0A
IS=-10A,VGS=0V
-30 V
-1 μA
±100
nA
-1.0 -1.5 -2.5
V
16 18
21.5 26
-0.8 -1.2
V
Maximum Body-Diode Continuous Current
Dynamic Parameters
IS
-10 A
Input Capacitance
Ciss
1500
Output Capacitance
Reverse Transfer Capacitance
Coss VDS=-15V,VGS=0V,f=1MHZ
Crss
327 pF
276
Switching Parameters
Total Gate Charge
Qg
30
Gate Source Charge
Qgs VGS=-10V,VDS=-15V,ID=-9.1A
5.3 nC
Gate Drain Charge
Qgd
7.6
Turn-on Delay Time
tD(on)
14
Turn-on Rise Time
Turn-off Delay Time
tr
tD(off)
VGS=-10V,VDS=-15V, ID=-6A,
RGEN=2.5Ω
20
ns
95
Turn-off Fall Time
tf
65
A. Repetitive Rating: Pulse width limited by maximum junction temperature.
B. Surface Mounted on FR4 Board, t ≤ 10 sec.
2 



CXW 4435
 P-channel Enhancement Mode MOSFET
 
 
 
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
4435
DATASHEET
3424
Figure1. Output Characteristics
Figure2. Transfer Characteristics
Figure3. Capacitance Characteristics
Figure4. Gate Charge
 
Figure5. Drain-Source on Resistance
Figure6. Drain-Source on Resistance
 
3 





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