4435 MOSFET Datasheet

4435 Datasheet, PDF, Equivalent


Part Number

4435

Description

P-channel Enhancement Mode MOSFET

Manufacture

CXW

Total Page 5 Pages
Datasheet
Download 4435 Datasheet


4435
 P-channel Enhancement Mode MOSFET
 
 
 
 
  The   uses  advanced  trench  technology  to 
provide  excellent  RDS(ON)  and  low  gate  charge.  This 
device  is  suitable  for  use  as  a  load  switch  or  in    PWM 
applications. 
 
GENERAL FEATURES 
RDS(ON) < 
RDS(ON) < 
Ω @
Ω @ 
 
 
High Power and current handing capability 
Lead free product is acquired 
Surface Mount Package 
  
Application 
PWM applications 
Load switch 
Power management 
 
4435
DATASHEET
3424
 
D
G
S
S1
S2
S3
G4
   8 D
7D
6D
5D
Marking and pin assignment
 
ABSOLUTE MAXIMUM RATINGS(TA=25unless otherwise noted) 
Parameter
Drain-source Voltage
Gate-source Voltage
Drain Current
TA=25@ Steady State
TA=70@ Steady State
 
Pulsed Drain Current A
 
  Total Power Dissipation @ TA=25
 
Thermal Resistance Junction-to-Ambient @ Steady State B
Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
RθJA
TJ ,TSTG
Maximum
-30
±20
-10
-8
-50
3.0
42
-55+150
Unit
V
V
A
A
W
/ W
                            
1 
                         

4435
 P-channel Enhancement Mode MOSFET
 
 
 
 
ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted) 
4435
DATASHEET
3424
Parameter
Symbol
Conditions
Min Typ Max Units
Static Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
VSD
VGS= 0V, ID=-250μA
VDS=-30V,VGS=0V,TC=25
VGS= ±20V, VDS=0V
VDS= VGS, ID=-250μA
VGS= -10V, ID=-10A
VGS= -4.5V, ID=-5.0A
IS=-10A,VGS=0V
-30 V
-1 μA
±100
nA
-1.0 -1.5 -2.5
V
16 18
21.5 26
-0.8 -1.2
V
Maximum Body-Diode Continuous Current
Dynamic Parameters
IS
-10 A
Input Capacitance
Ciss
1500
Output Capacitance
Reverse Transfer Capacitance
Coss VDS=-15V,VGS=0V,f=1MHZ
Crss
327 pF
276
Switching Parameters
Total Gate Charge
Qg
30
Gate Source Charge
Qgs VGS=-10V,VDS=-15V,ID=-9.1A
5.3 nC
Gate Drain Charge
Qgd
7.6
Turn-on Delay Time
tD(on)
14
Turn-on Rise Time
Turn-off Delay Time
tr
tD(off)
VGS=-10V,VDS=-15V, ID=-6A,
RGEN=2.5Ω
20
ns
95
Turn-off Fall Time
tf
65
A. Repetitive Rating: Pulse width limited by maximum junction temperature.
B. Surface Mounted on FR4 Board, t ≤ 10 sec.
2 


Features  P-channel Enhancement Mode MOSFET         The   uses  advanced  tr ench  technology  to  provide  exce llent  RDS(ON)  and  low  gate  ch arge.  This  device  is  suitable  for  use  as  a  load  switch  o r  in    PWM  applications.    GENERAL FEATURES   RDS(ON) <  R DS(ON) <  Ω @ Ω @      High Power and current handing  capability   Lead free product  is acquired   Surface Mount Pac kage     Application   PWM a pplications   Load switch   Po wer management    4435 DATASHEET 3424   D G S S1 S2 S3 G4    8 D 7D 6D 5D Marking and pin assignment ABSOLUTE MAXIMUM RATINGS(TA=25℃un less otherwise noted)  Parameter D rain-source Voltage Gate-source Voltag e Drain Current TA=25℃ @ Steady Sta te TA=70℃ @ Steady State   Pulsed D rain Current A     Total Power Dissi pation @ TA=25℃   Thermal Resistanc e Junction-to-Ambient @ Steady State B Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD RθJA TJ ,TSTG Maximum -30 ±20 -10 -8 -50 3.0 42 -55~+150 Unit V V.
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