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RD04LUS2

Part Number	RD04LUS2
Manufacturer	Mitsubishi
Description	Silicon RF Power MOSFET
Published	Feb 18, 2020
Detailed Description	< Silicon RF Power MOS FET (Discrete) > RD04LUS2 RoHS Compliance, Silicon MOSFET Power Transistor,527MHz,4W,3.6V DESCRI...
Datasheet	RD04LUS2 PDF File

Overview

< Silicon RF Power MOS FET (Discrete) > RD04LUS2 RoHS Compliance, Silicon MOSFET Power Transistor,527MHz,4W,3.
6V DESCRIPTION RD04LUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
FEATURES High power gain and High Efficiency.
Pout=4Wtyp, Drain Effi.
=65%typ @ Vds=3.
6V, Idq=280mA, Pin=0.
4W, f=527MHz Integrated gate protection diode.
OUTLINE DRAWING APPLICATION For output stage of high power amplifiers in VHF/UHF-band mobile radio sets.
RoHS COMPLIANT RD04LUS2-501, T512, T514 is EU RoHS compliant.
ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS VDSS Drain to source voltage VGS=0V 25 VG...

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RD04LUS2 Silicon RF Power MOSFET - Mitsubishi

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