Logic FET. P2504BDG Datasheet

P2504BDG FET. Datasheet pdf. Equivalent


Part P2504BDG
Description N-Channel Logic FET
Feature NIKO-SEM N-Channel Logic Level Enhancement P2504BDG Mode Field Effect Transistor ( Preliminary ) .
Manufacture NIKO-SEM
Datasheet
Download P2504BDG Datasheet


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Recommendation Recommendation Datasheet P2504BDG Datasheet




P2504BDG
NIKO-SEM
N-Channel Logic Level Enhancement P2504BDG
Mode Field Effect Transistor ( Preliminary )
TO-252 (DPAK)
Lead-Free
D
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 25m
ID
12A
G
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
VDS
VGS
ID
IDM
PD
Tj, Tstg
TL
1. GATE
2. DRAIN
3. SOURCE
LIMITS
40
±20
12
10
45
41
32
-55 to 150
275
UNITS
V
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Case
RθJc
3 °C / W
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1
75 °C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
Drain-Source On-State Resistance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
STATIC
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
VDS = 32V, VGS = 0V
VDS = 30V, VGS = 0V, TC = 125 °C
VDS = 10V, VGS = 10V
VGS = 4.5V, ID = 10A
VGS = 10V, ID = 12A
LIMITS
UNIT
MIN TYP MAX
40
1 2.0 3.0
V
±250 nA
1
µA
10
45 A
35 45
m
21 25
1 JAN-17-2005



P2504BDG
NIKO-SEM
N-Channel Logic Level Enhancement P2504BDG
Mode Field Effect Transistor ( Preliminary )
TO-252 (DPAK)
Lead-Free
Forward Transconductance1
gfs VDS = 10V, ID = 12A
DYNAMIC
18
Input Capacitance
Ciss
760
Output Capacitance
Coss VGS = 0V, VDS = 10V, f = 1MHz
165
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Crss
Qg
Qg s
Qgd
td(on)
tr
VDS = 0.5V ,(BR)DSS VGS = 10V,
ID = 12A
VDS = 20V, RL = 1
55
16
2.5
2.1
2.1
7.2
Turn-Off Delay Time2
td(off)
ID 1A, VGS = 10V, RGEN = 6
11.6
Fall Time2
tf
3.5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
Pulsed Current3
Forward Voltage1
IS
ISM
VSD IS = IS, VGS = 0V
Reverse Recovery Time
trr IF = 5 A, dlF/dt = 100A / µS
14.5
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 µsec, Duty Cycle 2 .
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
7.2
4.2
14
21.0
7.2
12
40
1.2
S
pF
nC
nS
A
V
nS
nC
REMARK: THE PRODUCT MARKED WITH “P2504BDG”, DATE CODE or LOT #
Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.
2 JAN-17-2005







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