VDS 1200 V
C3M0021120K
ID @ 25˚C
100 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on) 21 mΩ
N-Channel Enhancement Mode
Features
Package
3rd generation SiC MOSFET technology
Optimized package with separate driver source pin
8mm of creepage distance between drain and source
High blocking voltage with l...
