Power MOSFET. MTE100N10KRH8 Datasheet

MTE100N10KRH8 MOSFET. Datasheet pdf. Equivalent


CYStech MTE100N10KRH8
CYStech Electronics Corp.
Spec. No. : C059H8
Issued Date : 2017.04.25
Revised Date :
Page No. : 1/ 10
N-Channel Enhancement Mode Power MOSFET
MTE100N10KRH8 BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=2A
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
ESD protected gate
Pb-free lead plating and Halogen-free package
100V
6.8A
3.0A
102mΩ(typ)
Symbol
MTE100N10KRH8
GGate DDrain SSource
Outline
Pin 1
S
S
S
G
DFN5×6
D
D
D
D
G
S
S
S
D
D
D
D
Pin 1
Ordering Information
Device
MTE100N10KRH8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTE100N10KRH8
CYStek Product Specification


MTE100N10KRH8 Datasheet
Recommendation MTE100N10KRH8 Datasheet
Part MTE100N10KRH8
Description N-Channel Enhancement Mode Power MOSFET
Feature MTE100N10KRH8; CYStech Electronics Corp. Spec. No. : C059H8 Issued Date : 2017.04.25 Revised Date : Page No. : 1/ .
Manufacture CYStech
Datasheet
Download MTE100N10KRH8 Datasheet




CYStech MTE100N10KRH8
CYStech Electronics Corp.
Spec. No. : C059H8
Issued Date : 2017.04.25
Revised Date :
Page No. : 2/ 10
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=10V
(Note 5)
Continuous Drain Current @TC=100°C, VGS=10V
(Note 5)
Continuous Drain Current @TA=25°C, VGS=10V
(Note 2)
Continuous Drain Current @TA=70°C, VGS=10V
(Note 2)
Pulsed Drain Current @ VGS=10V
(Note 3)
Avalanche Current @L=0.1mH
(Note 3)
Body Diode Continuous Forward Current
Single Pulse Avalanche Energy @ L=1mH, ID=8Amps, VDD=25V
(Note 4)
Repetitive Avalanche Energy
(Note 3)
TC=25°C
(Note 1)
Power Dissipation
TC=100°C
TA=25°C
(Note 1)
(Note 2)
TA=70°C
(Note 2)
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
Symbol
VDS
VGS
ID
IDSM
IDM
IAS
IS
EAS
EAR
PD
PDSM
Tj, Tstg
Limits
100
±20
6.8
4.3
3
2.4
23
16
6.8
32
1.3
12.5
5
2.5
1.6
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 2)
Symbol
RθJC
RθJA
Value
10
50
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in² FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The value in any given application depends on the user’s specific board design. The
power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C.
3. Pulse width limited by junction temperature TJ(MAX)=150°C.
4. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 100% tested by conditions of VDD=25V,
ID=7A, L=100μH, VGS=10V.
5. Calculated continuous drain current based on maximum allowable junction temperature.
6. The static characteristics are obtained using <300μs pulses, duty cycle 0.5% maximum.
7. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient.
.
MTE100N10KRH8
CYStek Product Specification



CYStech MTE100N10KRH8
CYStech Electronics Corp.
Spec. No. : C059H8
Issued Date : 2017.04.25
Revised Date :
Page No. : 3/ 10
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ.
Max. Unit Test Conditions
Static
BVDSS
BVDSS/Tj
VGS(th)
*GFS
IGSS
IDSS
*RDS(ON)
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Rg
100 -
- 0.08
2-
- 3.5
--
--
--
- 102
- 5.7
- 1.6
- 1.1
- 6.2
- 17.2
- 12.8
- 5.6
- 257
- 34
-6
- 6.7
- V VGS=0V, ID=250μA
- V/°C Reference to 25°C, ID=250μA
4 V VDS = VGS, ID=250μA
- S VDS =10V, ID=5A
±10 VGS=±16V, VDS=0V
1 μA VDS =80V, VGS =0V
5 VDS =80V, VGS =0V, Tj=55°C
135 mΩ VGS =10V, ID=2A
8.6
- nC VDS=80V, ID=2A, VGS=10V
-
-
-
-
ns VDS=50V, ID=2A, VGS=10V, RG=1Ω
-
386
- pF VGS=0V, VDS=50V, f=1MHz
-
- Ω f=1MHz
Source-Drain Diode
*IS
*ISM
*VSD
*trr
*Qrr
-
-
-
-
-
-
-
6.8
23
A
0.82 1.2
V IS=2A, VGS=0V
17
12.8
-
-
ns
nC
VGS=0V, IF=2A, dIF/dt=100A/μs
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
MTE100N10KRH8
CYStek Product Specification







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