N-CHANNEL MOSFET. SVD3410T Datasheet

SVD3410T MOSFET. Datasheet pdf. Equivalent


Silan Microelectronics SVD3410T
SVD3410D/M/T_Datasheet
17A, 100V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD3410D/M/T is an N-channel enhancement mode high voltage MOS
field effect transistor which is produced using Silan new structure VDMOS
technology. The improved planar stripe cell and the improved guard ring
terminal have been especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high energy pulse
in the avalanche and commutation mode.
It is widely used in vehicle voltage regulator etc.
FEATURES
17A,100V,RDS(on)(typ.)=68m@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
ORDERING INFORMATION
Part No.
SVD3410D
SVD3410DTR
SVD3410M
SVD3410T
Package
TO-252-2L
TO-252-2L
TO-251D-3L
TO-220-3L
Marking
SVD3410D
SVD3410D
SVD3410M
SVD3410T
Material
Halogen free
Halogen free
Halogen free
Pb free
Packing
Tube
Tape & Reel
Tube
Tube
ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current
TC=25°C
TC=100°C
Drain Current Pulsed
Power Dissipation(TC=25C)
-Derate above 25C
Single Pulsed Avalanche Energy(Note 1)
Operation Junction Temperature Range
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
EAS
TJ
Tstg
Rating
SVD3410D/M
SVD3410T
100
±16
17
12
60
83 100
0.66 0.80
150
-55+175
-55+175
Unit
V
V
A
A
W
W/C
mJ
C
C
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.5
Page 1 of 8


SVD3410T Datasheet
Recommendation SVD3410T Datasheet
Part SVD3410T
Description 100V N-CHANNEL MOSFET
Feature SVD3410T; SVD3410D/M/T_Datasheet 17A, 100V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD3410D/M/T is an N-channel .
Manufacture Silan Microelectronics
Datasheet
Download SVD3410T Datasheet




Silan Microelectronics SVD3410T
SVD3410D/M/T_Datasheet
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
SVD3410D/M
1.51
62.5
Rating
SVD3410T
1.25
62.5
Unit
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise noted)
Characteristics
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source On State
Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Test conditions
VGS=0V, ID=250µA
VDS=100V, VGS=0V
VGS=±16V, VDS=0V
VGS= VDS, ID=250µA
Min.
100
--
--
1.0
VGS=10V, ID=10A
--
VDS=25V, VGS=0V,
f=1.0MHz
VDD=50V, VGS=5V RG=6Ω,
ID=9A
VDS=80V, ID=9A, VGS=5V
--
--
--
--
--
--
--
--
--
--
Typ.
--
--
--
--
Max.
--
1.0
±100
2.0
Unit
V
µA
nA
V
68 105 m
772 --
161 -- pF
40.3 --
8.0 --
47
40.67
--
--
ns
20.2 --
17.52
--
2.42 -- nC
10.32
--
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristics
Symbol
Test conditions
Continuous Source Current
Pulsed Source Current
IS Integral Reverse P-N Junction
ISM Diode in the MOSFET
Diode Forward Voltage
VSD IS=17A, VGS=0V
Reverse Recovery Time
Trr IS=9A, VDD=50V,
Reverse Recovery Charge
Qrr dIF/dt=100A/µs (Note 2)
Notes:
1. L=3.1mH,IAS=9.0A, RG=25Ω,starting TJ=25C;
2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%;
3. Essentially independent of operating temperature.
Min.
--
--
--
--
--
Typ.
--
--
--
85.5
0.24
Max.
17
60
1.3
--
--
Unit
A
V
ns
µC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.5
Page 2 of 8



Silan Microelectronics SVD3410T
TYPICAL CHARACTERISTICS
SVD3410D/M/T_Datasheet
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.5
Page 3 of 8





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