POWER TRANSISTOR. SVS11N60FD2 Datasheet

SVS11N60FD2 TRANSISTOR. Datasheet pdf. Equivalent


Silan Microelectronics SVS11N60FD2
SVS11N60D/F/S/FJ/T/KD2_Datasheet
11A, 600V DP MOS POWER TRANSISTOR
DESCRIPTION
SVS11N60D/F/S/FJ/T/KD2 is an N-channel enhancement mode high
voltage power MOSFETs produced using Silan’s DP MOS
technology. It achieves low conduction loss and switching losses. It
leads the design engineers to their power converters with high
efficiency, high power density, and superior thermal behavior.
Furthermore, it’s universal applicable, i.e., suitable for hard and soft
switching topologies.
FEATURES
11A,600V, RDS(on)(typ.)=0.3@VGS=10V
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
High peak current capability
ORDERING INFORMATION
Part No.
SVS11N60DD2TR
SVS11N60FD2
SVS11N60SD2
SVS11N60SD2TR
SVS11N60FJD2
SVS11N60TD2
SVS11N60KD2
Package
TO-252-2L
TO-220F-3L
TO-263-2L
TO-263-2L
TO-220FJ-3L
TO-220-3L
TO-262-3L
Marking
11N60DD2
11N60FD2
11N60SD2
11N60SD2
11N60FJD2
11N60TD2
11N60KD2
Hazardous
Substance Control
Halogen free
Halogen free
Halogen free
Halogen free
Halogen free
Halogen free
Halogen free
Packing
Tape & Reel
Tube
Tube
Tape & Reel
Tube
Tube
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:2.0
Page 1 of 11


SVS11N60FD2 Datasheet
Recommendation SVS11N60FD2 Datasheet
Part SVS11N60FD2
Description 600V DP MOS POWER TRANSISTOR
Feature SVS11N60FD2; SVS11N60D/F/S/FJ/T/KD2_Datasheet 11A, 600V DP MOS POWER TRANSISTOR DESCRIPTION SVS11N60D/F/S/FJ/T/.
Manufacture Silan Microelectronics
Datasheet
Download SVS11N60FD2 Datasheet




Silan Microelectronics SVS11N60FD2
SVS11N60D/F/S/FJ/T/KD2_Datasheet
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, TC=25C)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
TC=25°C
TC=100°C
Power Dissipation (TC=25C)
- Derate above 25C
Single Pulsed Avalanche Energy (Note1)
Reverse diode dv/dt (Note 2)
MOSFET dv/dt ruggedness (Note 3)
Operation Junction Temperature Range
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
EAS
dv/dt
dv/dt
TJ
Tstg
SVS11N60
DD2
89
0.71
Ratings
SVS11N60
F/FJD2
600
±30
11
7
44
35
0.28
310
15
50
-55+150
-55+150
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
SVS11N60
DD2
1.40
62.0
Ratings
SVS11N60
F/FJD2
3.57
62.50
SVS11N60
S/T/KD2
94
0.75
SVS11N60
S/T/KD2
1.33
62.50
Unit
V
V
A
A
W
W/C
mJ
V/ns
V/ns
C
C
Unit
C/W
C/W
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:2.0
Page 2 of 11



Silan Microelectronics SVS11N60FD2
SVS11N60D/F/S/FJ/T/KD2_Datasheet
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, TC=25C)
Characteristics
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source
on State Resistance
Gate resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(on)
Rg
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Test conditions
VGS=0V, ID=250µA
VDS=600V, VGS=0V
VGS=±30V, VDS=0V
VGS= VDS, ID=250µA
VGS=10V,
Tj=25C
ID=5.5A
Tj=125C
f=1MHz
f=1MHz,VGS=0V,
VDS=100V
VDD=300V, VGS=10V,
RG=10Ω, ID=11A
(Note 4,5)
VDD=480V, VGS=10V,
ID=11A
(Note 4,5)
Min.
600
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristics
Symbol
Test conditions
Continuous Source Current
IS Integral Reverse P-N Junction
Pulsed Source Current
ISM Diode in the MOSFET
Diode Forward Voltage
VSD IS=11A,VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
Trr VDD=50V, IF=11A ,
Qrr dIF/dt=100A/µs
Notes:
1. L=79mH,IAS=2.6A,VDD=100V, RG=25, starting temperature TJ=25C;
2. VDS=0~400V,ISD<=11A, TJ=25C;
3. VDS=0~480V;
4. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%;
5. Essentially independent of operating temperature.
Min.
--
--
--
--
--
Typ.
--
--
--
--
0.30
0.62
5.2
634
38
2.6
10
29
37
23
22
5.0
11
Typ.
--
--
--
371
3.8
Max.
--
1.0
±100
4.0
0.36
--
--
--
--
--
--
--
--
--
--
Max.
11
44
1.4
--
--
Unit
V
µA
nA
V
pF
ns
nC
Unit
A
V
ns
µC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:2.0
Page 3 of 11





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