N-Channel MOSFET. FDS6912A Datasheet

FDS6912A MOSFET. Datasheet pdf. Equivalent


ON Semiconductor FDS6912A
FDS6912A
Dual N-Channel Logic Level PowerTrench® MOSFET
General Description
These N-Channel Logic Level MOSFETs are produced
using ON Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
6 A, 30 V.
RDS(ON) = 28 m@ VGS = 10 V
RDS(ON) = 35 m@ VGS = 4.5 V
Fast switching speed
Low gate charge
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
DD1
DD1
DD2
DD2
SO-8
Pin 1 SO-8
SS2GS2SS1GG1
5
6 Q1
7
Q2
8
4
3
2
1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6912A
FDS6912A
13’’
Ratings
30
± 20
6
20
1.6
1.0
0.9
–55 to +150
78
40
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
©2003 Semiconductor Components Industries, LLC.
October-2017, Rev. 4
Publication Order Number:
FDS6912A/D


FDS6912A Datasheet
Recommendation FDS6912A Datasheet
Part FDS6912A
Description Dual N-Channel MOSFET
Feature FDS6912A; FDS6912A FDS6912A Dual N-Channel Logic Level PowerTrench® MOSFET General Description These N-Chann.
Manufacture ON Semiconductor
Datasheet
Download FDS6912A Datasheet




ON Semiconductor FDS6912A
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS Gate–Source Leakage
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 55°C
VGS = ±20 V, VDS = 0 V
30
V
25 mV/°C
1
10
±100
µA
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 6 A
VGS = 4.5 V, ID = 5 A
VGS = 10 V, ID = 6 A,TJ = 125°C
VGS = 10 V, VDS = 5 V
VDS = 10 V, ID = 6 A
1
20
1.9
–4.5
19
24
27
25
3V
mV/°C
28 m
35
44
A
S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
RG Gate Resistance
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz
VGS = 15 mV, f = 1.0 MHz
575 pF
145 pF
65 pF
2.1
Switching Characteristics
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
(Note 2)
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6
VDS = 15 V, ID = 6 A,
VGS = 5 V
8 16
5 10
23 37
36
5.8 8.1
1.7
2.1
ns
ns
ns
ns
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 1.3 A (Note 2)
trr
Diode Reverse Recovery Time
IF = 6 A, diF/dt = 100 A/µs
Qrr Diode Reverse Recovery Charge
0.75
20
10
1.3
1.2
A
V
nS
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°C/W when
mounted on a 0.5in2
pad of 2 oz copper
Scale 1 : 1 on letter size paper
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
b) 125°C/W when
mounted on a 0.02
in2 pad of 2 oz
copper
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c) 135°C/W when mounted on a
minimum mounting pad.



ON Semiconductor FDS6912A
Typical Characteristics
20
VGS = 10.0V
4.0V
16
6.0V
4.5V
12
3.5V
8
3.0V
4
0
0 0.5 1 1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
2
2.2
1.8 VGS = 3.5V
1.4 4.0
4.5V
5.0
6.0V
1 10.0V
0.6
0
4 8 12 16
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
20
1.6
ID = 6A
VGS = 10.0V
1.4
1.2
1
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
0.08
0.07
ID = 3A
0.06
0.05
0.04
TA = 125oC
0.03
0.02
TA = 25oC
0.01
2
468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
20
VDS = 5V
16
12
TA = 125oC
-55oC
8
25oC
4
0
1.5
2 2.5 3 3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
100
VGS = 0V
10
1
TA = 125oC
0.1 25oC
0.01
0.001
-55oC
0.0001
4 0 0.2 0.4 0.6 0.8 1 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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