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FDS6912

Part Number	FDS6912
Manufacturer	Fairchild Semiconductor
Description	Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
Published	Mar 30, 2005
Detailed Description	FDS6912 January 2000 FDS6912 Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description These N-...
Datasheet	FDS6912 PDF File

Overview

FDS6912 January 2000 FDS6912 Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description These N-Channel Logic Level MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features RDS(ON) = 0.
028 Ω @ VGS = 10 V • 6 A, 30 V.
RDS(ON) = 0.
042 Ω @ VGS = 4.
5 V.
• Optimized for use in switching DC/DC converters with PWM controllers • Very fast switching.
• Low gate charge D1 D1 D2 D2 S1 G1 5 6 7 Q1 4 3 2 Q2 SO-8 S2 8 1 G2 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25 C unless otherwise noted o Parameter Ratings 30 ±20 (Note 1a) Units V V A W 6 20 2 Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) 1.
6 1 0.
9 -55 to +150 °C TJ, Tstg Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 °C/W °C/W Package Marking and Ordering Information Device Marking FDS6912 2000 Fairchild Semiconductor Corporation Device FDS6912 Reel Size 13’’ Tape width 12mm Quantity 2500 units FDS6912 Rev E (W) FDS6912 Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 20 V, VGS = –20 V VGS = 0 V TJ =...

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