MTP2301S3 Mode MOSFET Datasheet

MTP2301S3 Datasheet, PDF, Equivalent


Part Number

MTP2301S3

Description

20V P-Channel Enhancement Mode MOSFET

Manufacture

CYStech

Total Page 8 Pages
Datasheet
Download MTP2301S3 Datasheet


MTP2301S3
CYStech Electronics Corp.
Spec. No. : C322S3
Issued Date : 2013.08.29
Revised Date : 2018.10.17
Page No. : 1/8
20V P-Channel Enhancement Mode MOSFET
MTP2301S3
BVDSS
ID@TA=25°C, VGS=-4.5V
RDSON(MAX)@VGS=-4.5V, ID=-1.6A
RDSON(MAX)@VGS=-2.5V, ID=-1A
Features
Advanced trench process technology
High density cell design for ultra low on resistance
Excellent thermal and electrical capabilities
Compact and low profile SOT-323 package
Pb-free lead plating and halogen-free package
-20V
-1.6A
75mΩ(typ.)
113mΩ(typ.)
Equivalent Circuit
MTP2301S3
Outline
SOT-323
D
GGate
SSource
DDrain
S
G
Ordering Information
Device
MTP2301S3-0-T1-G
Package
Shipping
SOT-323
(Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7reel
Product rank, zero for no rank products
Product name
MTP2301S3
CYStek Product Specification

MTP2301S3
CYStech Electronics Corp.
Spec. No. : C322S3
Issued Date : 2013.08.29
Revised Date : 2018.10.17
Page No. : 2/8
Absolute Maximum Ratings (Ta=25C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TA=25°C, VGS=-4.5V
Continuous Drain Current @TA=70°C, VGS=-4.5V
Pulsed Drain Current
Maximum Power Dissipation
Ta=25
Ta=70
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
Tj ; Tstg
Limits
-20
±8
-1.6
-1.3
-10
340 (Note)
218 (Note)
-55~+150
Unit
V
A
mW
C
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient(PCB mounted)
Note : Device mounted on minimum copper pad.
Symbol
Rth,ja
Limit
367 (Note)
Unit
C/W
Electrical Characteristics (Ta=25C)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
Min.
-20
-0.45
-
-
-
-
Typ. Max. Unit
-
-
-
-1
V
- ±100 nA
- -1 µA
75 110
113 150 m
*GFS
- 4.5 - S
Dynamic
Ciss -
Coss
-
Crss -
td(ON)
-
tr -
td(OFF)
-
tf -
Qg -
Qgs -
Qgd -
Source-Drain Diode
IS -
VSD -
trr* -
Qrr* -
446
57
52
9.2
7.3
38
12
4.4
0.5
1.5
-
-0.86
30
25
-
-
-
20
60
50
20
-
-
-
-1.6
-1.2
-
-
pF
ns
nC
A
V
ns
nC
Test Conditions
VGS=0V, ID=-250µA
VDS=VGS, ID=-250µA
VGS=±8V, VDS=0V
VDS=-16V, VGS=0V
ID=-1.6A, VGS=-4.5V
ID=-1A, VGS=-2.5V
VDS=-5V, ID=-1.6A
VDS=-10V, VGS=0V, f=1MHz
VDD=-10V, ID=-1A, VGS=-4.5V, RG=6Ω
VDS=-10V, ID=-1.6A, VGS=-2.5V
VGS=0V, IS=-1.6A
IF=-3A, dIF/dt=100A/μs
*Pulse Test : Pulse Width 300µs, Duty Cycle2%
MTP2301S3
CYStek Product Specification


Features CYStech Electronics Corp. Spec. No. : C 322S3 Issued Date : 2013.08.29 Revised Date : 2018.10.17 Page No. : 1/8 20V P -Channel Enhancement Mode MOSFET MTP23 01S3 BVDSS ID@TA=25°C, VGS=-4.5V RDS ON(MAX)@VGS=-4.5V, ID=-1.6A RDSON(MAX) @VGS=-2.5V, ID=-1A Features • Advanc ed trench process technology • High d ensity cell design for ultra low on res istance • Excellent thermal and elect rical capabilities • Compact and low profile SOT-323 package • Pb-free lea d plating and halogen-free package -20 V -1.6A 75mΩ(typ.) 113mΩ(typ.) Equiv alent Circuit MTP2301S3 Outline SOT-3 23 D G:Gate S:Source D:Drain S G Ordering Information Device MTP2301 S3-0-T1-G Package Shipping SOT-323 ( Pb-free lead plating and halogen-free p ackage) 3000 pcs / Tape & Reel Enviro nment friendly grade : S for RoHS compl iant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel P roduct rank, zero for no rank products Product name MTP2301S3 CYStek Product Speci.
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