N-Channel MOSFET. FQP2N60 Datasheet


FQP2N60 MOSFET. Datasheet pdf. Equivalent


Part Number

FQP2N60

Description

2A N-Channel MOSFET

Manufacture

Oucan Semi

Total Page 6 Pages
Datasheet
Download FQP2N60 Datasheet


FQP2N60
FQP2N60/FQPF2N60
600V,2A N-Channel MOSFET
General Description
Product Summary
The FQP2N60 & FQPF2N60 have been fabricated using
an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
700V@150
2A
< 4.4
TO-220
Top View
TO-220F
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
FQP2N60
FQPF2N60
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
2 2*
1.7 1.7*
8
2
60
120
5
TC=25°C
Power Dissipation B Derate above 25oC
PD
74 31
0.6 0.25
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
-55 to 150
300
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
FQP2N60
65
0.5
FQPF2N60
65
--
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
1.7
4
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev5: July 2010
Page 1 of 6

FQP2N60
FQP2N60/FQPF2N60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
BVDSS
/TJ
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
VDS=480V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V ID=250µA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=1A
gFS Forward Transconductance
VDS=40V, ID=1A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current
600
700
V
0.56
V/ oC
1
µA
10
±100 nΑ
3 4 4.5 V
3.6 4.4
3.5 S
0.79 1
V
2A
8A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
215 270 325
23 29 35
2.2 2.8 3.4
3.5 4.4 6.6
pF
pF
pF
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=480V, ID=2A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=300V, ID=2A,
RG=25
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=2A,dI/dt=100A/µs,VDS=100V
Qrr Body Diode Reverse Recovery Charge IF=2A,dI/dt=100A/µs,VDS=100V
9.5
1.9
4.7
17.2
14.3
27
17
154
0.80
11.4
2.3
5.6
185
1
nC
nC
nC
ns
ns
ns
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. L=60mH, IAS=2A, VDD=150V, RG=25, Starting TJ=25°C
Rev5: July 2010
Page 2 of 6


Features FQP2N60/FQPF2N60 600V,2A N-Channel MOSFE T General Description Product Summary The FQP2N60 & FQPF2N60 have been fabr icated using an advanced high voltage M OSFET process that is designed to deliv er high levels of performance and robus tness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss a long with guaranteed avalanche capabili ty these parts can be adopted quickly i nto new and existing offline power supp ly designs. VDS ID (at VGS=10V) RDS(ON ) (at VGS=10V) 100% UIS Tested 100% Rg Tested 700V@150℃ 2A < 4.4Ω TO-220 Top View TO-220F D G S Absolute M aximum Ratings TA=25°C unless otherwis e noted Parameter Symbol FQP2N60 FQ PF2N60 Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuo us Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Curr ent C Repetitive avalanche energy C S ingle plused avalanche energy G Peak d iode recovery dv/dt ID IDM IAR EAR EAS dv/dt 2 2* 1.7 1.7* 8 2 60 120 5 TC=25°C Power Dissipation B Derate .
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