FDMC6679AZ P-Channel MOSFET Datasheet

FDMC6679AZ Datasheet, PDF, Equivalent


Part Number

FDMC6679AZ

Description

P-Channel MOSFET

Manufacture

On Semiconductor

Total Page 7 Pages
Datasheet
Download FDMC6679AZ Datasheet


FDMC6679AZ
FDMC6679AZ
P-Channel PowerTrench® MOSFET
-30 V, -20 A, 10 mΩ
Features
„ Max rDS(on) = 10 mΩ at VGS = -10 V, ID = -11.5 A
„ Max rDS(on) = 18 mΩ at VGS = -4.5 V, ID = -8.5 A
„ HBM ESD protection level of 8 kV typical(note 3)
„ Extended VGSS range (-25 V) for battery applications
„ High performance trench technology for extremely low rDS(on)
„ High power and current handling capability
„ Termination is Lead-free and RoHS Compliant
General Description
The FDMC6679AZ has been designed to minimize losses in
load switch applications. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) and ESD protection.
Applications
„ Load Switch in Notebook and Server
„ Notebook Battery Pack Power Management
Top Bottom
Pin 1
S SG
S
MLP 3.3x3.3
D
D
D
D
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
Ratings
-30
±25
-20
-11.5
-32
41
2.3
-55 to +150
Units
V
V
A
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3.0
53
°C/W
Device Marking
FDMC6679AZ
Device
FDMC6679AZ
Package
MLP 3.3x3.3
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2009 Semiconductor Components Industries, LLC.
October-2017, Rev.4
1
Publication Order Number:
FDMC6679AZ/D

FDMC6679AZ
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = -250 μA, VGS = 0 V
ID = -250 μA, referenced to 25 °C
VDS = -24 V,
VGS = 0 V,
TJ = 125 °C
VGS = ±25 V, VDS = 0 V
-30 V
29 mV/°C
-1
-100
±10
μA
μA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250 μA
-1 -1.8 -3
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250 μA, referenced to 25 °C
-7 mV/°C
VGS = -10 V, ID = -11.5 A
8.6 10
rDS(on)
Static Drain to Source On Resistance VGS = -4.5 V, ID = -8.5 A
12 18 mΩ
VGS = -10 V, ID = -11.5 A, TJ = 125 °C
12 15
gFS Forward Transconductance
VDS = -5 V, ID = -11.5 A
46 S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = -15 V, VGS = 0 V,
f = 1 MHz
2985
570
500
3970
755
750
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = -15 V, ID = -11.5 A,
VGS = -10 V, RGEN = 6 Ω
VGS = 0 V to -10 V
VGS = 0 V to -5 V
VDD = -15 V,
ID = -11.5 A
12 21 ns
14 25 ns
63 100 ns
46 73 ns
65 91 nC
37 52 nC
8.7 nC
17 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage VGS = 0 V, IS = -11.5 A
VGS = 0 V, IS = -1.6 A
(Note 2)
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = -11.5 A, di/dt = 100 A/μs
0.83
0.71
31
16
1.30
1.20
49
28
V
ns
nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 53 °C/W when mounted on
a 1 in2 pad of 2 oz copper
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied.
www.onsemi.com
2


Features FDMC6679AZ P-Channel PowerTrench® MOSFE T FDMC6679AZ P-Channel PowerTrench® M OSFET -30 V, -20 A, 10 mΩ Features „ Max rDS(on) = 10 mΩ at VGS = -10 V, ID = -11.5 A „ Max rDS(on) = 18 mΩ at V GS = -4.5 V, ID = -8.5 A „ HBM ESD pro tection level of 8 kV typical(note 3) Extended VGSS range (-25 V) for batte ry applications „ High performance tre nch technology for extremely low rDS(on ) „ High power and current handling ca pability „ Termination is Lead-free an d RoHS Compliant General Description T he FDMC6679AZ has been designed to mini mize losses in load switch applications . Advancements in both silicon and pack age technologies have been combined to offer the lowest rDS(on) and ESD protec tion. Applications „ Load Switch in No tebook and Server „ Notebook Battery P ack Power Management Top Bottom Pin 1 S SG S MLP 3.3x3.3 D D D D D5 D6 D 7 D8 4G 3S 2S 1S MOSFET Maximum Ratin gs TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Sou.
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