FDS6675BZ P-Channel MOSFET Datasheet

FDS6675BZ Datasheet, PDF, Equivalent


Part Number

FDS6675BZ

Description

P-Channel MOSFET

Manufacture

On Semiconductor

Total Page 7 Pages
Datasheet
Download FDS6675BZ Datasheet


FDS6675BZ
FDS6675BZ
MOSFET – P-Channel,
POWERTRENCH)
-30 V, -11 A, 13 mW
Description
This PChannel MOSFET is produced using ON Semiconductor’s
advanced POWERTRENCH process that has been especially tailored
to minimize the onstate resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers and Portable
Battery Packs.
Features
Max RDS(on) = 13 mW at VGS = 10 V, ID = 11 A
Max RDS(on) = 21.8 mW at VGS = 4.5 V, ID = 9 A
Extended VGS Range (25 V) for Battery Applications
HBM ESD Protection Level of 5.4 kV Typical (Note 3)
High Performance Trench Technology for Extremely Low RDS(on)
High Power and Current Handling Capability
This Device is PbFree and RoHS Compliant
Specifications
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Ratings
Unit
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID Drain Current
Continuous (Note 1a)
Pulsed
30 V
±25 V
A
11
55
PD Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
2.5
1.2
1.0
W
TJ, TSTG Operating and Storage Junction
Temperature Range
55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
RqJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to
Ambient (Note 1a)
Ratings
25
50
Unit
°C/W
www.onsemi.com
DDD
D
Pin 1 S S S G
SOIC8
CASE 751EB
ELECTRICAL CONNECTION
D5
D6
D7
D8
4G
3S
2S
1S
MARKING DIAGRAM
FDS6675BZ
ALYW
FDS4435BZ
A
L
YW
= Specific Device Code
= Assembly Site
= Wafer Lot Number
= Assembly Start Week
ORDERING INFORMATION
Device
FDS6675BZ
Package
SOIC8
(PbFree)
Shipping
2,500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
August, 2019 Rev. 3
1
Publication Order Number:
FDS6675BZ/D

FDS6675BZ
FDS6675BZ
Table 1. ELECTRICAL CHARACTERISTICS (TA = 25°C)
Symbol
Parameter
Conditions
Min Typ Max Unit
OFF CHARACTERISTICS
BVDSS Drain to Source Breakdown Voltage
DBVDSS /
DTJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ON CHARACTERISTICS
ID = 250 mA, VGS = 0 V
ID = 250 mA, referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = ±25 V, VDS = 0 V
30
20
V
mV/°C
1 mA
±10 mA
VGS(th)
DVGS(th) /
DTJ
RDS(on)
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS
VGS = VDS, ID = 250 mA
ID = 250 mA, referenced to 25°C
VGS = 10 V, ID = 11 A
VGS = 4.5 V, ID = 9 A
VGS = 10 V, ID = 11 A, TJ = 125°C
VDS = 5 V, ID = 11 A
1
2 3 V
15.7 mV/°C
10.8 13.0 mW
17.4 21.8
15.0 18.8
34 S
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
VDS = 15 V, VGS = 0 V, f = 1 MHz
1855
335
330
2470
450
500
pF
pF
pF
td(on)
TurnOn Delay Time
tr Rise Time
td(off)
TurnOff Delay Time
tf Fall Time
Qg Total Gate Charge
Qg Total Gate Charge
Qgs Gate to Source Charge
Qgd Gate to Drain “Miller” Charge
DRAINSOURCE DIODE CHARACTERISTICS
VDD = 15 V, ID = 11 A, VGS = 10 V,
RGS = 6 W
VDS = 15 V, VGS = 10 V, ID = 11 A
VDS = 15 V, VGS = 5 V, ID = 11 A
3.0 10 ns
7.8 16 ns
120 200 ns
60 100 ns
44 62 nC
25 35 nC
7.2 nC
11.4 nC
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = 2.1 A
0.7 1.2
V
trr Reverse Recovery Time
IF = 11 A, di/dt = 100 A/ms
42 ns
Qrr Reverse Recovery Charge
IF = 11 A, di/dt = 100 A/ms
30 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
1. mRqoJuAnitsintghesusrufmaceofothf ethjeundcratioinnptinos.cRasqeJCanisdgcuaasreanttoeeadmbbyiednetstihgenrmwhalilereRsiqsCtaAnicsedwehteerrmeitnheedcbaysethteheursmear’lsrebfoearerdncdeeissigdne.fined as the solder
a. 50°C/W when
mounted on
a 1 in2 pad of 2 oz
copper.
b. 105°C/W when
mounted on
a 0.04 in2 pad of 2 oz
copper.
c. 125°C/W when
mounted on
a minimum pad
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
www.onsemi.com
2


Features FDS6675BZ MOSFET – P-Channel, POWERTR ENCH) -30 V, -11 A, 13 mW Description This P−Channel MOSFET is produced usi ng ON Semiconductor’s advanced POWERT RENCH process that has been especially tailored to minimize the on−state res istance. This device is well suited for Power Management and load switching ap plications common in Notebook Computers and Portable Battery Packs. Features Max RDS(on) = 13 mW at VGS = −10 V , ID = −11 A • Max RDS(on) = 21.8 m W at VGS = −4.5 V, ID = −9 A • Ex tended VGS Range (−25 V) for Battery Applications • HBM ESD Protection Lev el of 5.4 kV Typical (Note 3) • High Performance Trench Technology for Extre mely Low RDS(on) • High Power and Cur rent Handling Capability • This Devic e is Pb−Free and RoHS Compliant Speci fications MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parame ter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current − Continuous (Note 1a) − Pulsed −30 V ±25 V A −11 −55 PD Power Dissipation for Sin.
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