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FDG6301N-F085

ON Semiconductor

Dual N-Channel Digital FET


Description
Dual N-Channel, Digital FET FDG6301N-F085 Features 25 V, 0.22 A Continuous, 0.65 A Peak RDS(ON) = 4 Ω @ VGS = 4.5 V, RDS(ON) = 5 Ω @ VGS = 2.7 V. Very Low Level Gate Drive Requirements allowing Directop− Eration in 3 V Circuits (VGS(th) < 1.5 V) Gate−Source Zener for ESD Ruggedness ( >6 kV Human Body Model) Compact Industry Standard SC70−6 Surf...



ON Semiconductor

FDG6301N-F085

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