FDG6301N-F085 Digital FET Datasheet

FDG6301N-F085 Datasheet, PDF, Equivalent


Part Number

FDG6301N-F085

Description

Dual N-Channel Digital FET

Manufacture

ON Semiconductor

Total Page 6 Pages
Datasheet
Download FDG6301N-F085 Datasheet


FDG6301N-F085
Dual N-Channel, Digital FET
FDG6301N-F085
Features
25 V, 0.22 A Continuous, 0.65 A Peak
RDS(ON) = 4 Ω @ VGS = 4.5 V,
RDS(ON) = 5 Ω @ VGS = 2.7 V.
Very Low Level Gate Drive Requirements allowing Directop−
Eration in 3 V Circuits (VGS(th) < 1.5 V)
Gate−Source Zener for ESD Ruggedness ( >6 kV Human Body
Model)
Compact Industry Standard SC70−6 Surface Mount Package.
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
Low Voltage Applications as a Replacement for Bipolar Digital
Transistors and Small Signal MOSFETs
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Ratings Units
VDSS Drain to Source Voltage
25 V
VGS Gate to Source Voltage
8V
ID Drain Current Continuous
0.22 A
Pulsed
0.65
PD Power Dissipation
0.3 W
TJ, TSTG
ESD
Operating and Storage Temperature
Electrostatic Discharge Rating
MIL−STD−883D Human Body Model
(100 pF / 1500 W)
−55 to 150
6.0
°C
kV
RqJA Thermal Resistance, Junction to Ambient 415 °C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. RθJA is the sum of the junction−to−case and case−to−ambient thermal
resistance, where the case thermal reference is defined as the Solder
mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA
is determined by the board design. RθJA = 415 °C/W on minimum pad
mounting on FR−4 board in still air.
2. A suffix as “...F085P” has been temporarily introduced in order to manage a
double source strategy as ON Semiconductor has officially announced in
August 2014.
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
www.onsemi.com
SC−88 (SC−70 6 Lead), 1.25x2
CASE 419AD
ORDERING INFORMATION
Device
Device Marking
Package
Shipping
FDG6301N−F085
FDG6301N
SC−88 (SC−70 6 Lead)
(Pb−Free, Halogen Free)
3,000 units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D
© Semiconductor Components Industries, LLC, 2019
September, 2019 − Rev. 3
1
Publication Order Number:
FDG6301N−F085/D

FDG6301N-F085
FDG6301N−F085
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Off Characteristics
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
On Characteristics
BVDSS
IDSS
IGSS
ID = 250 mA, VGS = 0 V
VDS = 20 V, VGS = 0 V
VGS = ±8 V
TJ = 55°C
Min Typ Max Units
25 V
1
10
±100
mA
nA
Gate to Source Threshold Voltage
Drain to Source On Resistance
VGS(th)
rDS(on)
VGS = VDS, ID = 250 mA
ID = 0.22 A, VGS = 4.5 V
0.65 0.85
2.6
1.5
4
V
W
On−State Drain Current
Forward Transconductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at −4.5 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Switching Characteristics
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
ID(on)
gFS
ID = 0.19 A, VGS = 2.7 V
ID = 0.22 A, VGS = 4.5 V, TJ = 125°C
VGS = 4.5 V, VDS = 5 V
ID = 0.22 A, VDS = 5 V
Ciss
Coss
Crss
Qg(TOT)
Qgs
Qgd
VDS = 10 V, VGS = 0 V, f = 1 MHz
VGS = 0 to 4.5 V; VDD = 5 V, ID = 0.22 A
VDD = 5 V, ID = 0.22 A
3.7
5.3
0.22
0.2
5
7
9.5
6
4.5
0.29 0.4
0.12
0.03
s
pF
pF
pF
nC
td(on)
tr
td(off)
VDD = 5 V, ID = 0.5 A, VGS = 4.5 V,
RGEN = 50 W
5 10 ns
4.5 10 ns
4 8 ns
Fall Time
tf
3.2 7
ns
Drain−Source Diode Characteristics
Maximum Continuous Source Current
IS
0.25 A
Source to Drain Diode Voltage
VSD ISD = 0.25 A, VGS = 0 V
0.8 1.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2


Features Dual N-Channel, Digital FET FDG6301N-F0 85 Features • 25 V, 0.22 A Continuou s, 0.65 A Peak • RDS(ON) = 4 Ω @ VGS = 4.5 V, • RDS(ON) = 5 Ω @ VGS = 2. 7 V. • Very Low Level Gate Drive Requ irements allowing Directop− Eration i n 3 V Circuits (VGS(th) < 1.5 V) • Ga te−Source Zener for ESD Ruggedness ( >6 kV Human Body Model) • Compact Ind ustry Standard SC70−6 Surface Mount P ackage. • AEC−Q101 Qualified and PP AP Capable • These Devices are Pb−F ree, Halogen Free/BFR Free and are RoHS Compliant Applications • Low Voltag e Applications as a Replacement for Bip olar Digital Transistors and Small Sign al MOSFETs MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Units VDSS Drain to Source Voltage 25 V VGS Gate to So urce Voltage 8V ID Drain Current Cont inuous 0.22 A Pulsed 0.65 PD Power Dissipation 0.3 W TJ, TSTG ESD Opera ting and Storage Temperature Electrosta tic Discharge Rating MIL−STD−883D Human Body Model (100 pF / 1500 W) −55 to 150 6.0 °C kV R.
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