KAF-16803 Image Sensor Datasheet

KAF-16803 Datasheet, PDF, Equivalent


Part Number

KAF-16803

Description

Full Frame CCD Image Sensor

Manufacture

ON Semiconductor

Total Page 20 Pages
Datasheet
Download KAF-16803 Datasheet


KAF-16803
KAF-16803
4096 (H) x 4096 (V) Full
Frame CCD Image Sensor
Description
The KAF−16803 image sensor is a redesigned version of the
popular KAF−16801 image sensor (4096 (H) × 4096 (V) pixel
resolution), with enhancements that specifically target the needs of
high performance digital radiography applications. Improvements
include enhanced quantum efficiency for improved DQE at higher
spatial frequencies, lower noise for improved contrast in areas of high
density, and anti-blooming protection to prevent image bleed from
over exposure in regions outside the patient.
The sensor utilizes the TRUESENSE Transparent Gate Electrode to
improve sensitivity compared to the use of a standard front side
illuminated polysilicon electrode, as well as microlenses to maximize
light sensitivity. When combined with large imaging area and small
pixel size, the KAF−16803 provides the sensitivity, resolution and
contrast necessary for high quality digital radiographs.
To simplify device integration, the KAF−16803 image sensor uses
the same pin-out and package as the KAF−16801 image sensor.
Table 1. GENERAL SPECIFICATIONS
Parameter
Typical Value
Architecture
Full Frame CCD, Square Pixels
Total Number of Pixels
4145 (H) × 4128 (V) = 17.1 Mp
Number of Effective Pixels
4127 (H) × 4128 (V) = 17.0 Mp
Number of Active Pixels
4096 (H) × 4096 (V) = 16.8 Mp
Pixel Size
9.0 mm (H) × 9.0 mm (V)
Active Image Size
36.8 mm (H) × 36.8 mm (V)
52.1 mm Diagonal
645 1.3x Optical Format
Aspect Ratio
1:1
Horizontal Outputs
1
Saturation Signal
Output Sensitivity
100,000 electrons
22 mV/e
Quantum Efficiency (550 nm)
Responsivity (550 nm)
Read Noise (f = 4 MHz)
Dark Signal
60%
28.7 V/mJ/cm2
9 e
3 e/pix/sec
Dark Current Doubling
Temperature
6.3°C
Linear Dynamic Range
(f = 4 MHz)
80 dB
Blooming Protection
(4 ms Exposure Time)
> 100 X Saturation Exposure
Maximum Date Rate
10 MHz
Package
CERDIP (Sidebrazed, CuW)
Cover Glass
AR Coated, 2 Sides and Taped Clear
NOTE: Parameters above are specified at T = 25°C unless otherwise noted.
© Semiconductor Components Industries, LLC, 2015
December, 2015 − Rev. 2
1
www.onsemi.com
Figure 1. KAF−16803 CCD Image Sensor
Features
TRUESENSE Transparent Gate Electrode
for High Sensitivity
High Resolution
Large Image Area
High Quantum Efficiency
Low Noise Architecture
Board Dynamic Range
Application
Medical
Scientific
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Publication Order Number:
KAF−16803/D

KAF-16803
KAF−16803
ORDERING INFORMATION
Table 2. ORDERING INFORMATION − KAF−16803 IMAGE SENSOR
Part Number
Description
KAF−16803−ABA−DD−BA
Monochrome, Microlens, CERDIP Package (Sidebrazed, CuW),
AR Coated 2 Sides, Standard Grade
KAF−16803−ABA−DD−AE
Monochrome, Microlens, CERDIP Package (Sidebrazed, CuW),
AR Coated 2 Sides, Engineering Sample
KAF−16803−ABA−DP−BA
Monochrome, Microlens, CERDIP Package (Sidebrazed, CuW),
Taped Clear Cover Glass, Standard Grade
KAF−16803−ABA−DP−AE
Monochrome, Microlens, CERDIP Package (Sidebrazed, CuW),
Taped Clear Cover Glass, Engineering Sample
Marking Code
KAF−16803−ABA
Serial Number
See the ON Semiconductor Device Nomenclature document (TND310/D) for a full description of the naming convention
used for image sensors. For reference documentation, including information on evaluation kits, please visit our web site at
www.onsemi.com.
www.onsemi.com
2


Features KAF-16803 4096 (H) x 4096 (V) Full Fram e CCD Image Sensor Description The KAF −16803 image sensor is a redesigned v ersion of the popular KAF−16801 image sensor (4096 (H) × 4096 (V) pixel res olution), with enhancements that specif ically target the needs of high perform ance digital radiography applications. Improvements include enhanced quantum e fficiency for improved DQE at higher sp atial frequencies, lower noise for impr oved contrast in areas of high density, and anti-blooming protection to preven t image bleed from over exposure in reg ions outside the patient. The sensor ut ilizes the TRUESENSE Transparent Gate E lectrode to improve sensitivity compare d to the use of a standard front side i lluminated polysilicon electrode, as we ll as microlenses to maximize light sen sitivity. When combined with large imag ing area and small pixel size, the KAF 16803 provides the sensitivity, resol ution and contrast necessary for high q uality digital radiographs. To simplify device integration, the KAF−16.
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